BTS 840-S2 Infineon Technologies, BTS 840-S2 Datasheet - Page 10

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BTS 840-S2

Manufacturer Part Number
BTS 840-S2
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS 840-S2

Packages
P-DSO-20
Channels
2.0
Ron @ Tj = 25°c
30.0 mOhm
Recommended Operating Voltage Min.
5.0 V
Recommended Operating Voltage Max.
34.0 V
Il(sc)
24.0 A
GND disconnect
V
Any kind of load. In case of IN = high is V
Due to V
GND disconnect with GND pull up
each channel
Any kind of load. If V
Due to V
V
load,
For inductive load currents up to the limits defined by Z
(max. ratings and diagram on page 10) each switch is
protected against loss of V bb .
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Infineon technologies
bb
bb
V
V
disconnect with energized inductive
V
bb
bb
IN
each channel
GND
GND
V
high
ST
> 0, no V
> 0, no V
V
IN
V
ST
IN
ST
GND
IN
ST
IN
ST
ST
ST
, each channel
= low signal available.
> V
= low signal available.
PROFET
PROFET
PROFET
GND
GND
GND
IN
V
V
V
bb
bb
bb
- V
V
GND
V
IN(T+)
GND
OUT
OUT
OUT
OUT
device stays off
V
IN
- V
IN(T+)
L
10
.
Inductive load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R L
Maximum allowable load inductance for
a single switch off
L = f (I L ); T j,start = 150°C, V bb = 12 V, R L = 0
Z L [mH]
=
100
10
E
0.1
1
AS
4
E
=
E
bb
2
AS
I
L
6
·
R
·
= E
L
L
(
, each channel
8
V
bb
bb
10 12 14
IN
ST
+ E
+ |V
E
L
L
PROFET
- E
OUT(CL)
=
(one channel)
GND
1 /
V
R
bb
2
= V
·
L
16 18
|)
·
ON(CL)
I
2
L
ln
OUT
(1+
E AS
0 :
BTS 840 S2
4)
20 22 24
·
Z
2003-Oct-01
|V
i
L
L
(t) dt,
{
OUT(CL)
I
R
L
I L [A]
L
·
L
R
L
|
E
E
E Load
)
R
L

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