BTS 3256D Infineon Technologies, BTS 3256D Datasheet - Page 3

• Manufacturer Part Number: BTS 3256D
• Manufacturer: Infineon Technologies

Specifications of BTS 3256D

• Packages: PG-TO252-5
• Channels: 1.0
• Vds (max): 40.0 V
• Id(nom): 7.5 A
• Rds (on) (max): 10.0 mOhm
• Id(lim) (min): 42.0 A

Smart Low Side Power Switch
BTS3256D
1
The BTS 3256D is a single channel low-side power switch in
PG-TO-252-5-11 package providing embedded protective functions.
This HITFET™ is designed for automotive and industrial
applications with outstanding protection and control features.
The power transistor is a N-channel vertical power MOSFET.
The device is controlled by a chip in Smart Power Technology.
Basic Features
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Table 1
Operating voltage
Over voltage protection
Maximum ON State resistance at T
Typical ON State resistance at T
Nominal load current
Minimum current limitation
Type
BTS 3256D
Datasheet
Slew rate control by dedicated pin enabling EMC optimized switching or PWM operation
Max. switching Frequency 12kHz
Clear detection of digital fault signal also during fast PWM operation due to restart delay time
Thermal and overload protection with time controlled auto restart behavior
Time and Power limited active current limitation
Minimum R
Electrostatic discharge protection (ESD)
Very low leakage current
Green Product (RoHS compliant)
AEC (Automotive Electronics Council) Stress Test Qualification
Overview
Basic Electrical Data
DS(on)
achieved with 3.3V or 5V logic input
j
= 25°C
j
= 150°C
3
Package
PG-TO-252-5-11
V
V
R
R
I
I
D(nom)
D(lim)
SOP
D (AZ)
DS(ON,max)
DS(ON,typ)
5.5 V.... 30 V
40 V
20 m
10 m
7.5 A
42 A
PG-TO-252-5-11
Rev. 1.0, 2009-05-05
BTS 3256D