BTS 133TC Infineon Technologies, BTS 133TC Datasheet - Page 2

• Manufacturer Part Number: BTS 133TC
• Manufacturer: Infineon Technologies

Specifications of BTS 133TC

• Packages: PG-TO263-3
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 3.8 A
• Rds (on) (max): 50.0 mOhm
• Id(lim) (min): 21.0 A

Datasheet
1 In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed (see also page 3).
2 V
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70μm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB:
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Drain source voltage
Drain source voltage for short circuit protection
Continuous input current
-0.2V ≤ V
V
Operating temperature
Storage temperature
Power dissipation
T
Unclamped single pulse inductive energy
I
Electrostatic discharge voltage
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection V
V
t
t
D(ISO)
d
d
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
C
IN
IN
= 400 ms, R
= 400 ms, R
= 25 °C
=low or high; V
< -0.2V or V
= 7 A
IN
≤ 10V
I
I
= 2 Ω, I
= 2 Ω, I
IN
A
> 10V
=13.5 V
D
D
LoadDump
=0,5*7A
= 7A
1)
3)
(Human Body Model)
2)
= V
A
+ V
S
2
R
R
R
Symbol
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
DS(SC)
tot
AS
ESD
LD
thJC
thJA
thJA
Smart Low Side Power Switch
- 40 ... +150
- 55 ... +150
| I
no limit
Value
2000
3000
IN
1.4
75
45
HITFET BTS 133TC
60
32
90
90
74
| ≤ 2
Rev. 1.0, 2009-07-20
K/W
Unit
V
mA
°C
W
mJ
V