BTS 3118N Infineon Technologies, BTS 3118N Datasheet - Page 3
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BTS 3118N
Manufacturer Part Number
BTS 3118N
Description
Manufacturer
Infineon Technologies
Datasheet
1.BTS_3118N.pdf
(11 pages)
Specifications of BTS 3118N
Packages
PG-SOT223-4
Channels
1.0
Vds (max)
42.0 V
Id(nom)
2.17 A
Rds (on) (max)
100.0 mOhm
Id(lim) (min)
10.0 A
1 Device switched on into existing short circuit (see diagram Determination of I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Datasheet
Electrical Characteristics
Parameter
at T
Characteristics
Drain source clamp voltage
T
Off-state drain current T
V
Input threshold voltage
I
I
On state input current
On-state resistance
V
V
On-state resistance
V
V
Nominal load current
V
Current limit (active if V
V
D
D
j
DS
IN
IN
IN
IN
DS
IN
= - 40 ...+ 150, I
= 0.6 mA, T
= 0.6 mA, T
j
= 5 V, I
= 5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 32 V, V
= 0.5 V, T
= 25°C, unless otherwise specified
D
D
D
D
= 2.17 A, T
= 2.17 A, T
DS
IN
j
j
= 2.17 A, T
= 2.17 A, T
j
= 25 °C
= 150 °C
< 150°C, V
= 0 V
= 12 V, t
D
= 10 mA
DS
j
j
j
m
= 25 °C
= 150 °C
j
j
= -40 ... +150°C
>2.5 V)
= 25 °C
= 150 °C
IN
= 200 µs
= 10 V, T
1)
A
= 85 °C
3
Symbol
V
I
V
I
R
R
I
I
DSS
IN(on)
D(Nom)
D(lim)
DS(AZ)
IN(th)
DS(on)
DS(on)
Smart Low Side Power Switch
min.
2.17
1.3
0.8
42
10
D(lim) ). If the device is in on condit
-
-
-
-
-
-
Values
160
130
typ.
1.5
1.7
90
70
10
15
HITFET BTS 3118N
-
-
-
Rev. 1.3, 2008-04-14
max.
120
240
100
200
2.2
55
10
30
20
-
-
Unit
V
µA
V
µA
m
A