BSP 75N Infineon Technologies, BSP 75N Datasheet - Page 8

• Manufacturer Part Number: BSP 75N
• Manufacturer: Infineon Technologies

Specifications of BSP 75N

• Packages: PG-SOT223-4
• Channels: 1.0
• Vds (max): 60.0 V
• Id(nom): 0.7 A
• Rds (on) (max): 550.0 mOhm
• Id(lim) (min): 1.0 A

Figure 3
Conducted Emissions
Acc. IEC 61967-4 (1Ω/150Ω method)
Typ. V
150Ω-matching network
Figure 4
Data Sheet Rev. 1.4
100
-10
-20
90
80
70
60
50
40
30
20
10
0
0,1
V
BB
V
bb
BB
Emissions at PWM-mode with
BSP75N
IN
BSP75N
1
IN
SOURCE
Test circuit for ISO pulse
Test circuit for conducted
emission
PULSE
SOURCE
DRAIN
DRAIN
f / MHz
10
1)
150Ω-Network
100
R
L
R
L
150Ω / 8-H
150Ω / 13-N
Noise level
BSP75N
150ohm Class6
150ohm Class1
1000
8
Conducted Susceptibility
Acc. 47A/658/CD IEC 62132-4 (Direct
Power Injection)
Direct Power Injection: Forward Power
CW
Failure Criteria: Amplitude or frequency
variation max. 10% at OUT
Typ. V
and at PWM
Test circuit for conducted susceptibility
2)
1)
2)
For defined de coupling and high reproducibility a
defined choke (5µH at 1MHz) is inserted in the
Vbb-Line.
Broadband Artificial Network (short: BAN) consists
of the same choke (5µH at 1MHz) and the same
150 Ohm-matching
measurement for defined de coupling and high
reproducibility.
40
35
30
25
20
15
10
5
0
1
V
bb
BB
Susceptibility at DC-ON/OFF
BSP75N
IN
SOURCE
10
B A N
network
DRAIN
f / MHz
HITFET
100
as

for
BSP 75N
2008-07-10
R
L
HF
emission
Limit
OUT, ON
OUT, OFF
OUT, PWM
1000