TLE7250G Infineon Technologies, TLE7250G Datasheet - Page 12

• Manufacturer Part Number: TLE7250G
• Manufacturer: Infineon Technologies

Specifications of TLE7250G

• Packages: PG-DSO-8
• Transmission Ratemax: 1.0 Mbit/s
• Quiescent Current (max.): < 15 µA @ 5V standby
• Bus Wake-up Capability: No
• Additional Features: NRM, NEN
• Wake-up Inputs: No

6
6.1
Table 3
All voltages with respect to ground; positive current flowing into the pin;
(unless otherwise specified)
Pos.
Voltage
6.1.1
6.1.2
6.1.3
6.1.4
6.1.5
6.1.6
Temperature
6.1.7
6.1.8
ESD Immunity
6.1.9
6.1.10 ESD immunity at all other
6.1.11 ESD immunity to GND
1) Not subject to production test, specified by design
2) ESD susceptibility Human Body Model “HBM” according to ANSI/ESDA/JEDEC JS-001
3) ESD susceptibility, Charged Device Model “CDM” according to EIA/JESD22-C101 or ESDA STM5.3.1
Note: Within the functional range the IC operates as described in the circuit description. The electrical
Data Sheet
characteristics are specified within the conditions given in the associated electrical characteristics table.
Parameter
Supply voltage
CANH DC voltage against
GND
CANL DC voltage against
GND
Differential voltage
between CANH and CANL
Logic voltage logic input
pins NEN, NRM, TxD
Logic voltage at logic output
RxD
Junction temperature
Storage temperature
ESD immunity at CANH,
CANL against GND
pins
(all pins)
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings of Voltage, Current and Temperatures
Symbol
V
V
V
V
V
V
T
T
V
V
V
j
S
ESD_HBM_CAN
CC
CAN diff
ESD_HBM_All
CANH
CANL
Max_In
Max_Out
ESD_CDM
Limit Values
Min.
-0.3
-40
-40
-40
-0.3
-0.3
-40
- 55
-8
-2
-750
12
Max.
6.0
40
40
40
6.0
150
150
8
2
750
V
CC
Unit
V
V
V
V
V
V
°C
°C
kV
kV
V
General Product Characteristics
1)
Remarks
–
–
–
–
–
–
–
HBM
(100pF via 1.5 kΩ)
HBM
(100pF via 1.5 kΩ)
CDM
3)
Rev. 1.0, 2012-03-01
TLE7250G
2)
2)