BCV29 Infineon Technologies, BCV29 Datasheet - Page 2
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BCV29
Manufacturer Part Number
BCV29
Description
Manufacturer
Infineon Technologies
Datasheet
1.BCV29.pdf
(7 pages)
Specifications of BCV29
Packages
SOT89
Polarity
NPN
Vceo (max)
30.0 V
Ptot (max)
-
Hfe (min)
20,000.0
Ic
100.0 mA
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Thermal Resistance
Parameter
Junction - soldering point
1
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
C
C
C
C
E
C
C
C
C
C
C
C
C
C
C
For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
CB
CB
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 100 µA, I
= 100 µA, I
= 100 µA, V
= 100 µA, V
= 10 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, V
= 0.5 A, V
= 0.5 A, V
= 100 mA, I
= 100 mA, I
= 4 V, I
= 30 V, I
= 60 V, I
= 30 V, I
= 60 V, I
C
C
CE
CE
B
B
E
E
E
E
E
E
= 0
CE
CE
= 0
B
B
CE
CE
= 0 , BCV29
= 0 , BCV49
CE
CE
= 0 , BCV29
= 0 , BCV49
= 0 , T
= 0 , T
= 0 , BCV29
= 0 , BCV49
1)
= 5 V, BCV29
= 5 V, BCV49
= 0.1 mA
= 0.1 mA
= 5 V, BCV29
= 5 V, BCV49
= 1 V, BCV29
= 1 V, BCV49
= 5 V, BCV29
= 5 V, BCV49
A
A
= 150 °C, BCV29
= 150 °C, BCV49
1)
1)
A
= 25°C, unless otherwise specified
1)
2
Symbol
R
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
10000
20000
10000
4000
2000
4000
4000
2000
min.
30
60
40
80
10
-
-
-
-
-
-
-
Values
Value
≤ 20
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BCV29, BCV49
max.
100
0.1
0.1
1.5
10
10
1
2011-10-05
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
K/W
Unit
V
µA
nA
-
V