IRF5210 International Rectifier Corp., IRF5210 Datasheet

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IRF5210

Manufacturer Part Number
IRF5210
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
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IRF5210
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IR
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12 500
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IRF5210STRLPBF
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Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
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IRF5210STRRPBF
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IR
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17 600
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
JA
@ T
@ T
JC
CS
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ -10V
@ -10V
G
300 (1.6mm from case )
Typ.
0.50
–––
–––
S
D
HEXFET
10 lbf•in (1.1N•m)
-55 to + 175
Max.
-140
-5.0
200
± 20
780
-40
-29
-21
1.3
20
TO-220AB
®
R
IRF5210
V
DS(on)
Power MOSFET
DSS
Max.
0.75
I
–––
62
D
= -40A
= -100V
= 0.06
PD - 91434A
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
5/13/98

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IRF5210 Summary of contents

Page 1

... Junction-to-Ambient JA HEXFET Max. @ -10V GS @ -10V GS -140 200 ± 20 780 -5.0 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91434A IRF5210 ® Power MOSFET V = -100V DSS R = 0.06 DS(on -40A D TO-220AB Units -40 - 1.3 W/° -21 A ...

Page 2

... IRF5210 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... 0.1 Fig 2. Typical Output Characteristics 3 - 2.5 2.0 J 1.5 1.0 0.5 0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF5210 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V -4 .5V 4 0µ ° rain-to-S ource V oltage ( ...

Page 4

... IRF5210 iss iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. ...

Page 5

... Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF5210 D.U. µ d(off ...

Page 6

... IRF5210 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform ...

Page 7

... Fig 14. For P-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF5210 + *** ...

Page 8

... IRF5210 Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82. ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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