IRF630N International Rectifier Corp., IRF630N Datasheet

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IRF630N

Manufacturer Part Number
IRF630N
Description
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF630NL
Manufacturer:
IR
Quantity:
12 500
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF630NLPBF
Manufacturer:
CREE
Quantity:
10 000
Price:
Description
l
l
l
l
l
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Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF630NL) is available for low-
profile application.
Absolute Maximum Ratings
www.irf.com
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
2
J
STG
D
GS
AS
AR
Pak is suitable for high current applications because of its
@ T
@ T
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
@T
2
Pak is a surface mount power package capable of
C
C
C
= 25°C
= 100°C
= 25°C
Peak Diode Recovery dv/dt
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
®
Power MOSFETs from
Parameter


GS
GS

@ 10V
@ 10V
G
TO-220AB
IRF630N
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to +175
S
D
IRF630NS
Max.
±20
9.3
6.5
0.5
9.3
8.2
8.1
37
82
94
D
2
Pak
®
R
Power MOSFET
V
DS(on)
DSS
I
D
IRF630NS
IRF630NL
= 9.3A
PD - 94005A
IRF630N
= 200V
IRF630NL
= 0.30
TO-262
Units
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
1
10/11/00

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IRF630N Summary of contents

Page 1

... The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate typical surface mount application. The through-hole version (IRF630NL) is available for low- profile application. Absolute Maximum Ratings Parameter 25° ...

Page 2

... IRF630N/S/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 10 4.5V 1 ° 0.1 0.1 100 Fig 2. Typical Output Characteristics 3 3.0 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 0 9.0 10.0 Fig 4. Normalized On-Resistance IRF630N/S/L VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V  20µs PULSE WIDTH ° 175 Drain-to-Source Voltage ( 10V 100 120 140 160 180 ° ...

Page 4

... IRF630N/S/L 1200 0V MHZ C iss = SHORTED C rss = C gd 1000 C oss = 800 Ciss 600 Coss 400 Crss 200 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10  ° 175 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... 90% 90% 125 150 175 150 175 ° 10% 10% ° Fig 10b. Switching Time Waveforms Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRF630N/S D.U. 10V 10V µs µ ...

Page 6

... IRF630N/S 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 200 150 ...

Page 7

... Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRF630N/S =10V * ...

Page 8

... IRF630N/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10 10 .87 (. .62 (. .24 (. .84 (. .09 (. .47 (. 1 1 (.1 00 & ING 982 . ...

Page 9

... IRF630N/S/L 10.16 (.400 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.8 9 (.350 ...

Page 10

... IRF630N/S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.com 10 ...

Page 11

... IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 10/00 IRF630N/S/L 1 1 0.3 68 (.014 5 ) ...

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