IRFI540N International Rectifier Corp., IRFI540N Datasheet

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IRFI540N

Manufacturer Part Number
IRFI540N
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Thermal Resistance
HEXFET
T
I
I
I
P
V
E
I
E
dv/dt
T
R
R
D
D
DM
AR
STG
J
D
GS
AS
AR
@ T
@ T
JC
JA
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
Power MOSFET
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Junction-to-Case
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
PRELIMINARY
G
Min.
––––
––––
300 (1.6mm from case)
10 lbf•in (1.1N•m)
-55 to + 175
S
D
TO-220 FULLPAK
Typ.
––––
––––
Max.
0.36
110
±20
300
5.4
5.0
20
14
54
16
IRFI540N
R
DS(on)
V
Max.
2.8
65
DSS
I
PD - 9.1361A
D
= 20A
= 0.052
= 100V
Units
Units
W/°C
V/ns
°C/W
mJ
mJ
W
°C
A
V
A
3/16/98

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IRFI540N Summary of contents

Page 1

... Thermal Resistance Parameter R Junction-to-Case JC R Junction-to-Ambient JA PRELIMINARY G @ 10V GS @ 10V GS 300 (1.6mm from case) 10 lbf•in (1.1N•m) Min. –––– –––– 9.1361A IRFI540N 100V DSS R = 0.052 DS(on 20A D S TO-220 FULLPAK Max. Units 110 ...

Page 2

... IRFI540N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... TOP BOTTOM 4. 100 0.1 Fig 2. Typical Output Characteristics 3 2.5 2.0 1.5 1.0 0.5 0.0 A -60 -40 - Fig 4. Normalized On-Resistance IRFI540N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µ 175° rain-to-S o urc e V oltage ( 27A V = 10V ...

Page 4

... IRFI540N 2400 iss rss gd 2000 oss ds gd 1600 1200 800 400 rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 175° 25° ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 Fig 10b. Switching Time Waveforms 0.001 0. Rectangular Pulse Duration (sec) 1 IRFI540N D.U. 10V Pulse Width µs Duty Factor t ...

Page 6

... IRFI540N V DS D.U. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform L 700 600 + 500 400 0.01 300 200 V (BR)DSS 100 ...

Page 7

... Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V GS di/dt dv/ Forward Drop I SD IRFI540N DD * ...

Page 8

... IRFI540N Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.417) 10.40 (.409) 16.00 (.630) 15.80 (.622 13.70 (.540) 13.50 (.530) 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X Part Marking Information TO-220 FullPak ITH WORLD HEADQUARTERS: 233 Kansas St ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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