IRFR3410 International Rectifier Corp., IRFR3410 Datasheet

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IRFR3410

Manufacturer Part Number
IRFR3410
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Absolute Maximum Ratings
Thermal Resistance
l
l
l
l
www.irf.com
Applications
Notes  through † are on page 10
Benefits
Symbol
V
V
I
I
I
P
P
dv/dt
T
T
R
R
R
D
D
DM
DS
GS
D
D
J
STG
θJC
θJA
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
@T
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
C
A
= 25°C
= 25°C
= 100°C
= 25°C
OSS
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Linear Derating Factor
Gate-to-Source Voltage
to Simplify Design, (See
Parameter
Parameter
GS
GS
@ 10V
@ 10V
V
100V
DSS
Typ.
300 (1.6mm from case )
–––
–––
–––
IRFR3410
HEXFET Power MOSFET
D-Pak
-55 to + 175
R
DS(on)
Max.
± 20
0.71
100
125
110
31†
3.0
22
15
39mΩ
Max.
max
110
IRFU3410
1.4
40
I-Pak
IRFR3410
IRFU3410
31A †
Units
Units
°C/W
V/ns
W°C
°C
W
I
V
A
D
1
2/27/06

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IRFR3410 Summary of contents

Page 1

... HEXFET Power MOSFET V R DSS 100V D-Pak IRFR3410 @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) Typ. ––– ––– ––– IRFR3410 IRFU3410 max I DS(on) D 31A † 39mΩ I-Pak IRFU3410 Max. Units 100 V ± 20 31† 22 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 175° 25° 50V 20µs ...

Page 4

0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss 10 ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ • ...

Page 8

EXAMPLE: T HIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" N ote: "P" sembly line pos ition indicates "Lead-Free" ...

Page 9

EXAMPLE: T HIS IS AN IRFU120 WITH ASSE MBLY LOT CODE 5678 ASSE MBLED ON WW 19, 1999 ASSEMBLY LINE "A" Note: "P" embly line pos ition indicates "Lead-Free" OR www.irf.com PART NUMBER INTERNATIONAL ...

Page 10

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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