IRGP50B60PD1 International Rectifier Corp., IRGP50B60PD1 Datasheet

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IRGP50B60PD1

Manufacturer Part Number
IRGP50B60PD1
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRGP50B60PD1
Manufacturer:
FSC
Quantity:
15 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRGP50B60PD1PBF
Manufacturer:
IR
Quantity:
15 000
Price:
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
1
Applications
Features
Benefits
V
I
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Absolute Maximum Ratings
Thermal Resistance
C
C
CM
LM
F
F
FRM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
@ T
@ T
@ T
@ T
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
NPT Technology, Positive Temperature Coefficient
Lower V
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
CE
(SAT)
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Maximum Repetitive Forward Current
Parameter
Parameter
e
SMPS IGBT
G
n-channel
C
E
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
–––
IRGP50B60PD1
10 lbf·in (1.1 N·m)
-55 to +150
6.0 (0.21)
I
Max.
D
Typ.
0.24
600
150
150
±20
390
156
–––
–––
–––
75
45
40
15
60
Equivalent MOSFET
@ V
(FET equivalent) = 50A
R
V
CE(on)
CE(on)
Parameters
GE
V
CES
= 15V I
Max.
typ. = 61mΩ
typ. = 2.00V
0.32
–––
–––
1.7
40
= 600V
TO-247AC
www.irf.com
C
= 33A

G
Units
Units
g (oz)
°C/W
C
1/25/06
°C
W
V
A
V
E

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IRGP50B60PD1 Summary of contents

Page 1

... Thermal Resistance Junction-to-Case-(each Diode) θJC R Thermal Resistance, Case-to-Sink (flat, greased surface) θCS R Thermal Resistance, Junction-to-Ambient (typical socket mount) θJA Weight 1 SMPS IGBT n-channel Parameter e Parameter IRGP50B60PD1 V = 600V CES V typ. = 2.00V CE(on 15V I = 33A GE C Equivalent MOSFET Parameters  R typ. = 61mΩ CE(on) ...

Page 2

... IRGP50B60PD1 Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J R Internal Gate Resistance G V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance ...

Page 3

... GE 200 180 160 140 120 100 IRGP50B60PD1 100 120 140 160 T C (°C) Fig Power Dissipation vs. Case Temperature 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6. ...

Page 4

... IRGP50B60PD1 900 25°C 800 125°C 700 600 500 400 300 200 125°C 100 (V) Fig Typ. Transfer Characteristics V = 50V 10µ (V) Fig Typical 125°C ...

Page 5

... L = 200µ 10000 1000 100 400 500 600 700 CE 1.4 400V 1.2 1.0 0.8 150 200 250 GE = 33A IRGP50B60PD1 td OFF Ω ) Fig Typ. Switching Time vs 390V 33A Diode clamp used: 30ETH06 (See C.T.3) Cies Coes Cres 10 ...

Page 6

... IRGP50B60PD1 100 V = 200V 125° 25° 30A 15A 5. 100 di /dt - (A/µs) f 800 V = 200V 125° 25°C J 600 I = 30A F 400 I = 15A 5.0A F 200 0 100 di /dt - (A/µ 100 V = 200V 125° 25°C ...

Page 7

... Tc = 25° 150°C 10msec Single Pulse 0. 100 1000 Collector-to-Emitter Voltage (V) Fig Forward SOA 25° IRGP50B60PD1 R τi (sec) Ri (°C/ τ 0.157 0.000346 C τ τ 0.163 4.28 2 τ 2 Notes: 1. Duty Factor D = t1/t2 2 ...

Page 8

... IRGP50B60PD1 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) PFC diode Rg Fig.C.T.3 - Switching Loss Circuit 8 L VCC 80 V DUT L DUT / VCC DRIVER REVERSE RECOVERY CIRCUIT V = 200V R 0.01 Ω 70µH D dif/dt ADJUST IRFP250 G S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit L DUT 480V Rg Fig.C.T.2 - RBSOA Circuit ...

Page 9

... I RRM 0. / RRM (rec)M RRM RRM Fig. WF3 - Reverse Recovery Waveform and Definitions IRGP50B60PD1 90 TEST CURRENT 10 Eon Loss -0.10 0.00 0.10 0.20 Time(µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ T = 25°C using Fig. CT.3 J ...

Page 10

... IRGP50B60PD1 Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application. EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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