IRLML5203TR International Rectifier Corp., IRLML5203TR Datasheet
IRLML5203TR
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IRLML5203TR Summary of contents
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Ultra Low On-Resistance l l P-Channel MOSFET Surface Mount l Available in Tape & Reel l l Low Gate Charge Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP -15V -10V -7.0V -5.5V -4.5V -4.0V 10 -3.5V BOTTOM -2.7V 1 -2.70V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 10 ...
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1MHz iss rss oss ds gd 600 C iss 400 200 C oss C rss 0 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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-3.0A 0.09 0.08 0.07 4.0 6.0 8.0 10.0 12.0 -V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge ...
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Temperature ( °C ) Fig 14. Threshold Voltage Vs. Temperature www.irf.com PROVISIONAL -250µ 0.001 75 100 125 150 0.010 0.100 1.000 ...
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TM Micro3 Package Outline 0.10 (.004 NOTES: 1. DIMENSIONING & TOLERANCING PER ...
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TM Micro3 Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER PART NUMBER CODE REFERENCE IRLML2402 1B = IRLML2803 1C = IRLML6302 1D = IRLML5103 1E ...
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TM Micro3 Tape & Reel Information 2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO ...