IRLML6402 International Rectifier Corp., IRLML6402 Datasheet

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IRLML6402

Manufacturer Part Number
IRLML6402
Description
Manufacturer
International Rectifier Corp.
Datasheet
l
l
l
l
l
l
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3™, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Thermal Resistance
V
I
I
I
P
P
E
V
T
R
www.irf.com
D
D
DM
J,
DS
D
D
AS
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambientƒ
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
G
®
Typ.
75
HEXFET Power MOSFET
-55 to + 150
S
D
Max.
± 12
0.01
-3.7
-2.2
-20
-22
1.3
0.8
11
Micro3™
R
DS(on)
Max.
V
100
DSS
= 0.065Ω
= -20V
Units
Units
W/°C
mJ
°C
V
A
V
1
08/11/04

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IRLML6402 Summary of contents

Page 1

Ultra Low On-Resistance P-Channel MOSFET l l SOT-23 Footprint l Low Profile (<1.1mm) Available in Tape and Reel l l Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V 10 -2.25V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...

Page 4

0V MHZ C iss = rss = C gd 800 C oss = Ciss 600 400 Coss 200 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 SINGLE PULSE 1 (THERMAL RESPONSE) ...

Page 6

Id = -3.7A 0.06 0.04 0.02 2.0 3.0 4.0 5.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.20 0.16 0.12 0.08 0.04 0.00 6.0 7.0 0 ...

Page 7

... RECOMMENDED FOOT PRINT 0.972 3X [.038] 0.95 [.0375] 1.90 [.075] Micro3 (SOT-23/TO-236AB) Part Marking Information PART NUMBER PART NUMB ER CODE REFERENCE IRLML 2402 B = IRL ML2803 C = IRL ML6302 D = IRL ML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRL ML5203 www.irf.com ccc aaa ...

Page 8

TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...

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