IRLR2905 International Rectifier Corp., IRLR2905 Datasheet

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IRLR2905

Manufacturer Part Number
IRLR2905
Description
Manufacturer
International Rectifier Corp.
Datasheet

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Description
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Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Thermal Resistance
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
www.irf.com
R
R
R
I
I
I
P
V
E
I
E
dv/dt
T
T
D
D
DM
AR
STG
D
GS
AR
J
AS
For recommended footprint and soldering techniques refer to application note #AN-994
@ T
@ T
JC
JA
JA
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2905)
Straight Lead (IRLU2905)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 100°C
= 25°C
= 25°C
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
S
D
-55 to + 175
IRLR/U2905
Max.
42 …
0.71
160
110
± 16
210
5.0
30
25
11
T O -252 A A
®
R
D -P ak
Power MOSFET
DS(on)
Max.
V
110
I
1.4
50
D
DSS
= 42A…
PD- 91334E
= 0.027
= 55V
T O -25 1A A
I-P ak
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
A
V
1
12/8/00

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IRLR2905 Summary of contents

Page 1

... Logic-Level Gate Drive l Ultra Low On-Resistance l l Surface Mount (IRLR2905) Straight Lead (IRLU2905 Advanced Process Technology Fast Switching l Fully Avalanche Rated l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

Page 2

IRLR/U2905 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5V 2 0µ 5° 0 ...

Page 4

IRLR/U2905 ...

Page 5

LIMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 SINGLE ...

Page 6

IRLR/U2905 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt ...

Page 8

IRLR/U2905 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRLR/U2905 Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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