MRF255 Freescale Semiconductor, Inc, MRF255 Datasheet

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MRF255

Manufacturer Part Number
MRF255
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
MRF255
Manufacturer:
MORNSUN
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field-Effect Transistor
N–Channel Enhancement–Mode
to 54 MHz. The high gain, broadband performance and linear characterization of
this device makes it ideal for large–signal, common source amplifier applications
in 12.5 Volt mobile and base station equipment.
MOTOROLA RF DEVICE DATA
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 1995
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications at frequencies
Guaranteed Performance at 54 MHz, 12.5 Volts
Characterized with Series Equivalent Large–Signal Impedance Parameters
Excellent Thermal Stability
All Gold Metal for Ultra Reliability
Aluminum Nitride Package Electrical Insulator
Circuit Board Photomaster Available by Ordering Document
MRF255PHT/D from Motorola Literature Distribution.
Derate above 25 C
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.
Output Power — 55 Watts PEP
Power Gain — 13 dB Min
Two–Tone IMD — –25 dBc Max
Efficiency — 40% Min, Two–Tone Test
Characteristic
Rating
Symbol
Symbol
V DGR
V DSS
R JC
V GS
T stg
P D
I D
T J
55 W, 12.5 Vdc, 54 MHz
CASE 211–11, STYLE 2
MRF255
– 65 to +150
RF POWER FET
BROADBAND
N–CHANNEL
Value
Max
175
200
1.0
1.0
36
36
22
20
Order this document
by MRF255/D
MRF255
Watts
W/ C
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
1

MRF255 Summary of contents

Page 1

... Characterized with Series Equivalent Large–Signal Impedance Parameters Excellent Thermal Stability All Gold Metal for Ultra Reliability Aluminum Nitride Package Electrical Insulator Circuit Board Photomaster Available by Ordering Document MRF255PHT/D from Motorola Literature Distribution. MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage ( 1 Gate– ...

Page 2

... DD = 12.5 Vdc, P out = 400 mA) Output Mismatch Stress 54 54.001 MHz ( 12.5 Vdc, P out = 55 W (PEP 400 mA, VSWR = 20:1, at all phase angles) (1) To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. MRF255 2 Symbol Min Typ ...

Page 3

... C15 C16 C17 N2 C14 OUTPUT C11 C12 12.5 Vdc 400 MHz 54.001 MHz INPUT POWER (WATTS PEP 0 400 MHz SUPPLY VOLTAGE (VOLTS) MRF255 ...

Page 4

... Table 1. Series Equivalent Input and Output Impedance 12.5 Vdc 400 mA, P out = 55 W PEP f MHz 54 Z OL* = Conjugate of the optimum load impedance into which the device operates at a given power, voltage and frequency. MRF255 4 TYPICAL CHARACTERISTICS 1000 100 Vdc V GS(th) = 2.3 Vdc ...

Page 5

... S 22 é é 0.45 – 148 48 0.64 – 151 25 0.84 – 164 14 0.89 – 172 10 0.91 – 176 9 0.91 – 178 10 0.91 – 178 11 0.91 – 179 12 0.91 – 179 14 0.92 – 180 16 0.92 180 18 0.92 179 20 0.92 179 24 0.92 179 29 0.93 178 34 0.93 177 38 0.93 177 43 0.94 176 47 0.94 175 50 0.95 175 53 0.95 174 MRF255 5 ...

Page 6

... DESIGN CONSIDERATIONS The MRF255 is a common–surce, RF power, N–channel enhancement mode Metal–Oxide Semiconductor Field–Effect Transistor (MOSFET). Motorola RF MOSFETs feature a verti- cal structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs ...

Page 7

... Some applications may re- quire a more elaborate bias sytem. GAIN CONTROL For CW applications, power output of the MRF255 may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, AGC/ALC and modulation systems. ...

Page 8

... B 0.465 0.510 11.82 12.95 C 0.229 0.275 5.82 6.98 D 0.216 0.235 5.49 5.96 E 0.084 0.110 2.14 2.79 H 0.144 0.178 3.66 4.52 J 0.003 0.007 0.08 0.17 K 0.435 ––– 11.05 ––– NOM 45 NOM Q 0.115 0.130 2.93 3.30 R 0.246 0.255 6.25 6.47 U 0.720 0.730 18.29 18.54 STYLE 2: PIN 1. SOURCE 2. GATE 3. SOURCE 4. DRAIN *MRF255/D* MRF255/D MOTOROLA RF DEVICE DATA ...

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