RD07MVS1 Mitsumi Electronics, Corp., RD07MVS1 Datasheet

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RD07MVS1

Manufacturer Part Number
RD07MVS1
Description
Manufacturer
Mitsumi Electronics, Corp.
Datasheet

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RD07MVS1
Manufacturer:
MITSUBISHI
Quantity:
5 000
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RD07MVS1
Manufacturer:
MITSUBI
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RD07MVS1-101
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Part Number:
RD07MVS1-T112
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CHINFA
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RD07MVS1B
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MITSUBISHI
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5 000
Part Number:
RD07MVS1B-101
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MITSUBISHI
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6 000
DESCRIPTION
RD07MVS1 is a MOS FET type transistor
specifically designed for VHF/UHF RF
power amplifiers applications.
FEATURES
High power gain:
High Efficiency: 60%typ. (175MHz)
High Efficiency: 55%typ. (520MHz)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS1-101,T112 is a RoHS compliant products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
RD07MVS1
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ELECTROSTATIC SENSITIVE DEVICE
RoHS Compliance,
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI ELECTRIC
OUTLINE DRAWING
Silicon MOSFET Power Transistor,175MHz,520MHz,7W
1/9
6.0+/-0.15
INDEX MARK
(Gate)
MITSUBISHI RF POWER MOS FET
RD07MVS1
0.2+/-0.05
(0.25)
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
UNIT:mm
1
2
3
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
10 Jan 2006
(0.25)

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RD07MVS1 Summary of contents

Page 1

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. FEATURES High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) APPLICATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets ...

Page 2

... Drain efficiency KD1 Pout2 Output power Drain efficiency KD2 Load VSWR tolerance Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W CONDITIONS RATINGS Vgs=0V 30 Vds=0V +/- 20 Tc=25 50 °C Zg=Zl=50 1 ...

Page 3

... Vds(V) Vds VS. Coss CHARACTERISTICS 120 Ta=+25°C f=1MHz 100 Vds(V) RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Vgs-Ids CHARACTERISTICS 10.0 Ta=+25°C Vds=10V 8.0 6.0 4.0 2.0 0.0 160 200 0 Vds VS. Ciss CHARACTERISTICS 160 Vgs=5V Ta=+25°C 140 f=1MHz 120 Vgs=4.5V ...

Page 4

... Idq=750mA Pin(dBm) Vdd-Po CHARACTERISTICS @f=175MHz 30 Ta=25°C f=175MHz 25 Pin=0.3W Icq=700mA 20 Zg=ZI=50 ohm Vdd(V) RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Pin-Po CHARACTERISTICS 12.0 80 10.0 60 8.0 3 6.0 40 4 0.0 0 Pin-Po CHARACTERISTICS 14.0 80 12.0 10 8.0 40 6.0 4.0 20 2.0 ...

Page 5

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 10 Vds=10V Tc=-25~+75° Vgs(V) RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W -25°C +25°C +75° MITSUBISHI ELECTRIC 5/9 10 Jan 2006 ...

Page 6

... RD 07MVS1 22pF 175MHz 3m m 3.5m m 11.5m m 68O HM 22pF 180pF Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0. :line width=1.0m m 20pF RD07MVS1 520MHz 6.5m m 3.5m m 3.5m m 3.5m m 20pF 10pF Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0. :ine width=1.0m m MITSUBISHI ELECTRIC 6/9 ...

Page 7

... Zin* Zout* Zo=10: 520MHz Zin* Zout* Zo=10: 520MHz Zin* 520MHz Zout* RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 175MHz Zout* Vdd=7 ...

Page 8

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA) Freq. S11 [MHz] (mag) (ang) 100 0.890 -174.1 150 0.897 -175.6 175 0.899 -176.0 200 0.901 -176.3 250 0.907 -176.7 300 0.913 -177.0 350 0.918 -177.3 400 0.924 -177 ...

Page 9

... These results causes in fire or injury. RD07MVS1 MITSUBISHI RF POWER MOS FET RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W warning ! MITSUBISHI ELECTRIC ...

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