SKM300GAL128D Semikron International, SKM300GAL128D Datasheet
SKM300GAL128D
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SKM300GAL128D Summary of contents
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SKM 300GB128D ... ® SEMITRANS 3 SPT IGBT Module SKM 300GB128D SKM 300GAL128D Features Typical Applications GB GAL 1 Absolute Maximum Ratings Symbol Conditions IGBT Inverse Diode Freewheeling Diode Module Characteristics Symbol Conditions IGBT 13-10-2006 RAA Values Units min. typ. ...
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SKM 300GB128D ... ® SEMITRANS 3 SPT IGBT Module SKM 300GB128D SKM 300GAL128D Features Typical Applications GB GAL 2 Characteristics Symbol Conditions Inverse Diode FWD Module This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. ...
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SKM 300GB128D ... ® SEMITRANS 3 SPT IGBT Module SKM 300GB128D SKM 300GAL128D Features Typical Applications GB GAL Symbol Conditions Z th(j-c)l Z th(j-c)D 13-10-2006 RAA Values Units © by SEMIKRON ...
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SKM 300GB128D ... Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = Fig. 5 Typ. transfer characteristic 4 Fig. 2 Rated current vs. temperature I CC'+ EE' Fig. 4 Typ. turn-on ...
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SKM 300GB128D ... Fig. 7 Typ. switching times vs Fig. 9 Transient thermal impedance Fig. 11 Typ. CAL diode peak reverse recovery current 5 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 CAL diode forward ...
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SKM 300GB128D ... UL Recognized 6 13-10-2006 RAA File no. 63 532 © by SEMIKRON ...