APT100GT60JRDL Microsemi Corporation, APT100GT60JRDL Datasheet - Page 2

• Manufacturer Part Number: APT100GT60JRDL
• Description: Insulated Gate Bipolar Transistor - Resonant Mode; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2.5; IC (A): 80
• Manufacturer: Microsemi Corporation

Dynamic Characteristic
Thermal and Mechanical Characteristics
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Symbol
Symbol Characteristic / Test Conditions
SSOA
Torque
V
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
V
t
t
t
t
E
E
E
E
C
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
R
R
Isolation
Q
on1
on2
off
G
W
GEP
t
t
on1
on2
t
t
on1
on2
oes
res
ies
ge
off
off
θJC
θJC
gc
r
f
r
f
g
is external gate resistance not including gate driver impedance.
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
T
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-On Switching Energy
Turn-Off Switching Energy
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Terminals and Mounting Screws
RMS Voltage
ces
includes both IGBT and FRED leakages.
(50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
3
6
6
4
4
5
5
T
J
= 150°C, R
Inductive Switching (125°C)
Inductive Switching (25°C)
L = 100μH, V
V
GE
Test Conditions
Gate Charge
T
= 0V, V
V
T
V
V
V
V
V
R
R
J
I
I
I
f = 1MHz
J
CC
CC
C
C
C
CE
= +125°C
GE
GE
GE
G
G
G
= +25°C
= 100A
= 100A
= 100A
= 300V
= 4.3Ω , V
= 4.3Ω
= 4.3Ω
= 400V
= 400V
= 15V
= 15V
= 15V
CE
CE
= 25V
= 600V
GE
= 15V,
2500
Min
300
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5150
3250
3525
3125
3275
4650
3750
Typ
475
295
460
210
320
100
350
100
8.0
40
40
75
40
75
29.2
Typ
-
-
-
-
-
APT100GT60JRDL
Max
Max
0.25
0.34
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
10
-
-
Unit
°C/W
Unit
Volts
in·lbf
nC
pF
N·m
ns
μJ
ns
μJ
V
A
g