STP3055L2 SamHop Microelectronics Corp., STP3055L2 Datasheet - Page 3
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STP3055L2
Manufacturer Part Number
STP3055L2
Description
N-Channel Logic Level E nhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet
1.STP3055L2.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP3055L2
Manufacturer:
ST
Quantity:
12 500
S TP/B3055L2
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
Parameter
1500
1200
900
600
300
20
16
12
8
4
0
0
0
0
Figure 1. Output Characteristics
V
V
2
1
DS
DS
Figure 3. Capacitance
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
Crss
V
GS
2
4
=10,9,8,7,6,5,4,3V
6
3
8
4
A
=25 C unless otherwise noted)
Symbol
V
GS
10
V
=2V
5
SD
Ciss
Coss
12
6
b
V
GS
3
Condition
= 0V, Is =15A
2.2
1.8
1.4
1.0
0.6
0.2
Figure 4. On-Resistance Variation with
25
20
15
10
0
0.0
5
0
-50
V
Figure 2. Transfer Characteristics
GS
I
D
-25
=4.5V
=6A
0.6
V
GS
Temperature
, Gate-to-Source Voltage (V)
0
1.2
25
1.8
Min Typ Max Unit
50
-55 C
2.4
75
25 C
1.1
Tj=125 C
100
3.0
C
Tj( C)
125
1.3
3.6
V