MBR2045CT-E1 BCD Semiconductor, MBR2045CT-E1 Datasheet - Page 3

• Manufacturer Part Number: MBR2045CT-E1
• Description: HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
• Manufacturer: BCD Semiconductor

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dP
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Thermal Characteristics
Jul. 2008 Rev. 1. 1
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
Parameter
Maximum Thermal Resistance
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current
(Rated V
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0µs, 1.0kHz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V
ESD (Machine Model=C)
ESD (Human Body Model=3B)
R
R
) T
, Square Wave, 20 kHz) T
C
=139
o
C
R
)
Symbol
R
R
θ
θ
JC
JA
C
=137
o
C
Junction to Case
Junction to Ambient
3
Condition
Symbol
V
V
I
T
I
I
dv/dt
I
F(AV)
RRM
FRM
RWM
V
FSM
BCD Semiconductor Manufacturing Limited
RRM
T
STG
R
J
TO-220F-3
TO-220-3
TO-220-3
-65 to 150
>8000
10000
Value
>400
150
150
1.0
45
10
20
D
Value
/dT
2.2
4.5
60
J
< 1/R
MBR2045C
Data Sheet
θ
JA
V/µs
Unit
.
o
o
V
A
A
A
A
V
V
o
C
C
Unit
C/W