STG2017 SamHop Microelectronics Corp., STG2017 Datasheet - Page 4

• Manufacturer Part Number: STG2017
• Description: Dual N-Channel E nhancement Mode Field Effect Transistor
• Manufacturer: SamHop Microelectronics Corp.

S T G 2017
F igure 7. T rans conductance V ariation
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
25
20
15
10
5
4
3
2
1
0
5
0
-50 -25
0
0
V
I
T j, J unction T emperature ( C )
DS
DS
I
2
D
F igure 9. G ate C harge
with Drain C urrent
=10V
=5A
Qg, T otal G ate C harge (nC )
, Drain-S ource C urrent (A)
3
with T emperature
0
4
25
6
6
50
8
9
75 100 125
10
V
I
D
DS
=250uA
=V
12
V
G S
12
DS
=5V
14 16
15
4
F igure 6. B reakdown V oltage V ariation
F igure 8. B ody Diode F orward V oltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.03
0.1
20
50
10
10
1
1 1
0
-50 -25
0.4
0.1
S ingle P ulse
V
F igure 10. Maximum S afe
V
T j, J unction T emperature ( C )
T c=25 C
V ariation with S ource C urrent
G S
S D
with T emperature
=4.5V
0.6
, B ody Diode F orward V oltage (V )
V
DS
0
, Drain-S ource V oltage (V )
25
1
0.8
50
O perating Area
1.0
75 100 125
I
D
=250uA
10 20
T
J
1.2
=25 C
1.4
50