IRG4PSC71UD International Rectifier, IRG4PSC71UD Datasheet

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IRG4PSC71UD

Manufacturer Part Number
IRG4PSC71UD
Description
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Manufacturer
International Rectifier
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4PSC71UDPBF
Manufacturer:
JRC
Quantity:
1 000
Price:
Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
www.irf.com
Thermal Resistance\ Mechanical
• Generation 4 IGBT design provides tighter
• IGBT co-packaged with HEXFRED ultrafast, ultrasoft
• Industry-benchmark Super-247 package with
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
• Maximum power density, twice the power
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs
• Cost and space saving in designs that require
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
C
C
CM
LM
F
FM
STG
CES
GE
D
D
J
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
recovery anti-parallel diodes for use in bridge
higher power handling capability compared to
same footprint TO-247
available
configurations
multiple, paralleled IGBTs
handling of TO-247, less space than TO-264
@ T
@ T
@ T
JC
JC
CS
JA
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Parameter
Parameter
G
n-cha n ne l
20.0(2.0)
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
–––
–––
IRG4PSC71UD
C
E
SUPER - 247
-55 to +150
UltraFast CoPack IGBT
Max.
6 (0.21)
± 20
85
600
200
200
350
350
140
60
60
Typ.
0.24
–––
–––
–––
–––
@V
V
CE(on) typ.
V
GE
CES
PD - 91682A
= 15V, I
Max.
0.36
0.69
–––
–––
–––
38
= 600V
= 1.67V
C
= 60A
Units
N (kgf)
Units
g (oz)
°C/W
°C
W
V
A
V
1
5/12/99

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IRG4PSC71UD Summary of contents

Page 1

... Junction-to-Case - IGBT JC R Junction-to-Case - Diode JC R Case-to-Sink, flat, greased surface CS R Junction-to-Ambient, typical socket mount JA Recommended Clip Force Weight www.irf.com PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT C V CES V CE(on) typ 15V n-cha SUPER - 247 Max. 600 ...

Page 2

... IRG4PSC71UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– GE(th Forward Transconductance fe I Zero Gate Voltage Collector Current CES ...

Page 3

... Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 ° 15V 1 3.0 3.5 5 Fig Typical Transfer Characteristics IRG4PSC71UD oth: D uty 5° °C sink riv ified ipation = ° ...

Page 4

... IRG4PSC71UD LIM ITE (° Fig Maximum Collector Current vs. Temperature 0.50 0.1 0.20 0.10 0.05 0. ...

Page 5

... Fig Typical Gate Charge vs. Gate-to-Emitter Voltage 100 15V 480V -60 -40 -20 Fig Typical Switching Losses vs. IRG4PSC71UD 100 200 300 Q , Total Gate Charge (nC 5.0Ohm 5 120 100 120 140 160 ° ...

Page 6

... IRG4PSC71UD 5.0Ohm 150 C ° 480V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 1000 V GE ...

Page 7

... ° ° 30A /dt Fig Typical di f IRG4PSC71UD I = 30A 60A 120A F 1000 /µ / 120A 60A /µ ...

Page 8

... IRG4PSC71UD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d( td(on) t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, ...

Page 9

... Figure 18a's D.U. 480V Figure 20. Pulsed Collector Current IRG4PSC71UD Test Circuit 480V @25°C C Test Circuit 9 ...

Page 10

... IRG4PSC71UD Notes: Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20) V =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot Current limited by the package, (Die current = 100A) Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St ...

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