IRG4RC10SDTR International Rectifier, IRG4RC10SDTR Datasheet

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IRG4RC10SDTR

Manufacturer Part Number
IRG4RC10SDTR
Description
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package; A IRG4RC10SD with Tape and Reel Packaging
Manufacturer
International Rectifier
Datasheet
1.IRG4RC10SDTR.pdf (11 pages)
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
Thermal Resistance
• Generation 4 IGBT's offer highest efficiencies
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
• Lower losses than MOSFET's conduction and
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
• Tight parameter distribution
• IGBT co-packaged with HEXFRED
• Industry standard TO-252AA package
R
R
R
Wt
V
I
I
I
I
I
I
V
P
P
T
T
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
IGBT's . Minimized recovery characteristics require
Diode losses
C
C
CM
LM
F
FM
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
in bridge configurations
available
When mounted on 1" square PCB (FR-4 or G-10 Material).
ultra-soft-recovery anti-parallel diodes for use
STG
less/no snubbing
CES
GE
D
D
J
θJC
θJC
θJA
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Parameter
Parameter
TM
ultrafast,

G
n-channel
0.3 (0.01)
Typ.
–––
–––
–––
IRG4RC10SD
C
E
Standard Speed CoPack
-55 to +150
Max.
± 20
600
8.0
4.0
14
18
18
16
38
15
CE(on) typ.
GE
Max.
–––
3.3
7.0
50
CES
PD-91678B
=
C
06/14/07
IGBT
Units
Units
g (oz)
°C
V
A
V
1

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IRG4RC10SDTR Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Extremely low voltage drop 1.1V(typ • S-Series: Minimizes power dissipation KHz PWM frequency in inverter drives KHz in brushless DC ...

Page 2

IRG4RC10SD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th ...

Page 3

Square wave: 60% of rated voltage 1.00 I 0.50 Ideal diodes 0.00 0.1 Fig Typical Load Current vs. Frequency 100 ° 80µs PULSE WIDTH 1 0.5 1.0 ...

Page 4

IRG4RC10SD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL ...

Page 5

1MHz ies res 400 oes ies 300 C oes 200 C res 100 ...

Page 6

IRG4RC10SD 15 Ω 100 150 C ° 480V 15V Collector Current (A) C Fig Typical ...

Page 7

V = 200V 125° 25° 100 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di 200 V = 200V ...

Page 8

IRG4RC10SD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce ...

Page 9

Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...

Page 10

IRG4RC10SD 5 10 ,5)5 $   ,5)5   www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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