FCB11N60F Fairchild Semiconductor, FCB11N60F Datasheet
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FCB11N60F
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FCB11N60F Summary of contents
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... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FCB11N60F Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. ...
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... J ≤ 11A, di/dt ≤ 1200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FCB11N60F Rev. A1 Package Reel Size 2 D -PAK 330mm T = 25°C unless otherwise noted C Conditions ...
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... D Figure 5. Capacitance Characteristics 6000 5000 4000 C oss 3000 C 2000 iss C 1000 rss Drain-Source Voltage [V] DS FCB11N60F Rev. A1 Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 1 10 ...
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... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FCB11N60F Rev. A1 (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 Notes : 250 μ A 0.5 D 0.0 100 150 200 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FCB11N60F Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FCB11N60F Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions 9.90 1.27 ±0.10 2.54 TYP 10.00 FCB11N60F Rev -PAK 2 ±0.20 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 0.10 ±0.15 2.40 ±0.20 +0.10 0.50 –0.05 10.00 ±0.20 (8.00) (4.40) (2XR0.45) 0.80 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FCB11N60F Rev. A1 ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ QFET MicroPak™ ...