EFC480C Excelics Semiconductor, Inc., EFC480C Datasheet
EFC480C
Manufacturer Part Number
EFC480C
Description
Low Distortion Gaas Power Fet
Manufacturer
Excelics Semiconductor, Inc.
Datasheet
1.EFC480C.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS (T
MAXIMUM RATINGS AT 25
Note: 1. Exceeding any of the above ratings may result in permanent damage.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
SYMBOLS
SYMBOLS
P
G
PAE
Idss
Gm
Vp
BVgd
BVgs
Rth
1dB
1dB
+33.5dBm TYPICAL OUTPUT POWER
18.0dB TYPICAL POWER GAIN AT 2GHz
High BVgd FOR 10V BIAS
0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
Si
ADVANCED EPITAXIAL DOPING PROFILE
Idss SORTED IN 80mA PER BIN RANGE
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
3
2. Exceeding any of the above ratings may reduce MTTF below design goals.
N
4
Excelics
PASSIVATION AND PLATED HEAT SINK
Output Power at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Gain at 1dB Compression
Vds=8V, Ids=50% Idss
Saturated Drain Current
Transconductance
Pinch-off Voltage
Drain Breakdown Voltage Igd=4.8mA
Source Breakdown Voltage Igs=4.8mA
Thermal Resistance (Au-Sn Eutectic Attach)
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
PARAMETERS
PARAMETERS/TEST CONDITIONS
PRELIMINARY DATA SHEET
O
C
Vds=3V, Vgs=0V
Vds=3V, Ids=10mA
Vds=3V, Vgs=0V
ABSOLUTE
14V
-8V
Idss
120mA
32dBm
175
-65/175
11.4 W
a
= 25
o
C
Low Distortion GaAs Power FET
o
f= 2GHz
f= 4GHz
f= 2GHz
f= 4GHz
f= 2GHz
C
O
C)
1
Chip Thickness: 75 13 microns
All Dimensions In Microns
CONTINUOUS
MIN
10V
-4.5V
960mA
20mA
@3dB Compression
150
-65/150
9.5 W
32.0
16.0
640
200
-15
-10
6
o
C
*
'
o
EFC480C
TYP
C
33.5
33.5
18.0
12.5
960
560
-2.5
-20
-17
40
12
6
*
'
MAX
1440
-4.0
2
6
UNIT
o
dBm
mA
C/W
mS
dB
%
V
V
V
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EFC480C Summary of contents
Page 1
... Chip Thickness microns O All Dimensions In Microns = MIN f= 2GHz f= 4GHz f= 2GHz f= 4GHz f= 2GHz Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=10mA ABSOLUTE CONTINUOUS 14V -8V Idss 120mA 32dBm o 175 C o -65/175 C 11.4 W EFC480C ' ' * * TYP MAX UNIT 32.0 33.5 dBm 33.5 16.0 18 640 960 1440 ...
Page 2
... EFC480C ---S22--- Mag Ang 179.8 ...