1N5614 EIC Semiconductor Incorporated, 1N5614 Datasheet

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1N5614

Manufacturer Part Number

1N5614

Description

Glass Passivated Junction Silicon Rectifiers

Manufacturer

EIC Semiconductor Incorporated

Datasheet

1.1N5614.pdf (1 pages)

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Current page: 1 of 1
Download datasheet (121Kb)

Rating at 25

For capacitive load, derate current by 20%.

Notes :

Page 1 of 1

FEATURES :

MECHANICAL DATA :

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

PRV : 200 - 1000 Volts

Io : 1.0 Ampere

1N5614 - 1N5622

* Glass passivated chip

* High forward surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight :

Maximum Working Peak Reverse Voltage

Minimum Breakdown Voltage @ 50 μA

Maximum Average Forward Current at Ta = 55 °C

Peak Forward Surge Current

(Ta = 100 °C,f = 60 Hz, I

Minimum Forward Voltage at I

Maximum Forward Voltage at I

Maximum Reverse Current

Maximum Reverse Recovery Time ( Note 1 )

Thermal Resistance , Junction to Lead (Note 2)

Operating Junction and Storage Temperature Range

surges @ 1 minute intervals)

(1) Reverse Recovery Test Conditions : I

(2) At 3/8"(10 mm) lead length form body.

°

Method 208 guaranteed

C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

0.34 gram

RATING

F(AV)

= 750 mA for ten 8.3 ms

F

F

at V

at V

= 3.0 A

= 3.0A

at Ta = 100 °C

RWM

RWM

F

, Ta = 25 °C

, Ta = 100 °C

= 0.5 A, I

RM

= 1.0 A, I

R(REC)

SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT

T

V

V

V

V

J

I

BR(MIN)

R

I

F(MAX)

I

, T

F(AV)

F(MIN)

Trr

RWM

FSM

R(H)

I

ӨJL

R

= 0.25 A.

STG

GLASS PASSIVATED JUNCTION

200

220

Dimensions in inches and ( millimeters )

SILICON RECTIFIERS

0.107 (2.7)

0.080 (2.0)

0.034 (0.86)

0.028 (0.71)

400

440

Certificate TH97/10561QM

-65 to +175

DO - 41

0.75

600

660

1.0

0.8

1.3

0.5

2.0

30

25

38

800

880

1.00 (25.4)

0.205 (5.2)

0.161 (4.1)

1.00 (25.4)

Rev. 02 : July 24, 2006

MIN.

MIN.

Certificate TW00/17276EM

1000

1100

°C/W

μA

μs

°C

V

V

A

A

V

V

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