1N4448W-V Vishay, 1N4448W-V Datasheet - Page 2

• Manufacturer Part Number: 1N4448W-V
• Description: Small Signal Fast Switching Diode
• Manufacturer: Vishay

1N4448W-V
Vishay Semiconductors
Thermal Characteristics
T
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Electrical Characteristics
T
Rectification Efficieny Measurement
Circuit
www.vishay.com
2
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Forward voltage
Leakage current
Capacitance
Reverse recovery time
Rectification efficiency
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
17436
Parameter
60 Ω
I
I
V
V
V
V
I
V
f = 100 MHz, V
F
F
F
R
R
R
F
R
= 5 mA
= 100 mA
= 10 mA to I
= V
= 20 V
= 75 V
= 20 V, T
= 6 V, R
V
RF
R
= 0 V
Test condition
= 2 V
L
J
= 100 Ω
= 150 °C
R
RF
= 10 mA,
Test condition
= 2 V
Symbol
2 nF
V
V
ην
I
I
I
t
R
R
R
rr
F
F
Symbol
R
T
thJA
T
stg
j
5 kΩ
0.62
0.45
Min
- 65 to + 150
Typ.
Value
350
150
V
1)
O
Document Number 85722
Max
0.72
25
50
1
5
4
4
Rev. 1.3, 12-Dec-05
K/W
Unit
°C
°C
Unit
nA
µA
µA
pF
ns
V
V