BAR63V-04 Vishay, BAR63V-04 Datasheet

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BAR63V-04

Manufacturer Part Number
BAR63V-04
Description
Rf Pin Diodes
Manufacturer
Vishay
Datasheet
RF PIN Diodes - Dual, Series in SOT-23
Description
Characterized by a very low reverse Capacitance the
PIN Diode BAR63V-04 was designed for RF signal
tuning. As a function of the forward bias current the
forward resistance (rf) can be adjusted to less than
1 Ω while the low reverse capacitance offers a high
isolation. Typical applications for this PIN Diodes are
wireless, mobile and TV-systems.
Features
Applications
For frequency up to 3 GHz
RF-signal tuning
Mobile, wireless and TV-Applications
Parts Table
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 85691
Rev. 1.3, 15-Apr-05
• Low forward resistance
• Very small reverse capacitance
• Lead (Pb)-free component
• Component in accordance to
BAR63V-04
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Reverse voltage
Reverse current
Forward voltage
Diode capacitance
amb
amb
RoHS 2002/95/EC and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Part
Parameter
Parameter
BAR63V-04-GS18 or BAR63V-04-GS08
I
V
I
f = 1 MHz, V
f = 1 MHz, V
R
F
R
= 100 mA
= 10 µA
= 35 V
Test condition
Test condition
R
R
Ordering code
= 0
= 5 V
e3
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.1 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Symbol
V
C
C
V
I
R
R
F
D
D
Symbol
3
T
V
I
T
stg
F
R
j
C4
2
Min
50
Marking
1
- 55 to + 150
Vishay Semiconductors
Value
0.28
0.23
Typ.
100
150
50
1
BAR63V-04
3
Tape and Reel
Max
1.2
0.3
10
2
Remarks
www.vishay.com
18256
Unit
mA
°C
°C
V
Unit
nA
pF
pF
V
V
1

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BAR63V-04 Summary of contents

Page 1

... RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation ...

Page 2

... BAR63V-04 Vishay Semiconductors Parameter Forward resistance f = 100 MHz 100 MHz 100 MHz, I Charge carrier life time mA Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 1. Forward Resistance vs. Forward Current 0. MHz 0.25 0.20 0.15 0.10 0.05 0. Reverse V oltage (V) 18333 R Figure 2. Diode Capacitance vs. Reverse Voltage www ...

Page 3

... Figure 5. Typical Charge Recovery Curve Package Dimensions in mm (Inches) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016 0.95 (.037) 0.95 (.037) Document Number 85691 Rev. 1.3, 15-Apr-05 200 0.175 (.007) 0.098 (.005) 2.6 (.102) 2.35 (.092) 0.52 (0.020) 2.0 (0.079) 0.95 (0.037) BAR63V-04 Vishay Semiconductors ISO Method E 0.9 (0.035) 0.95 (0.037) 17418 www.vishay.com 3 ...

Page 4

... BAR63V-04 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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