BAT81S Vishay, BAT81S Datasheet - Page 2

• Manufacturer Part Number: BAT81S
• Description: Small Signal Schottky Diodes
• Manufacturer: Vishay

BAT81S/82S/83S
Vishay Semiconductors
Thermal Characteristics
T
Electrical Characteristics
T
Typical Characteristics
T
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2
Thermal resistance junction to ambient air l = 4 mm, T
Junction temperature
Storage temperature range
Forward voltage
Reverse current
Diode capacitance
amb
amb
amb
Figure 2. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
15795
15794
Figure 1. Max. Reverse Power Dissipation vs.
1000
Parameter
100
14
12
10
0.1
10
8
6
4
2
0
1
25
25
Parameter
R
thJA
P
T
Junction Temperature
T
50
50
R
j
j
P
= 540 K/W
- Limit at 80 % V
- Junction Temperature (°C)
P
- Junction Temperature (°C)
R
R
- Limit at 100 %
- Limit at 100 % V
75
75
I
I
I
V
V
F
F
F
R
R
R
= 0.1 mA
= 1 mA
= 15 mA
100
100
= V
= 1 V, f = 1 MHz
R
V
V
Rmax
R
R
V
= V
Test condition
R
125
125
= 60 V
RRM
Test condition
150
150
L
= constant
Symbol
C
V
V
V
I
R
F
F
F
D
15796
Figure 4. Diode Capacitance vs. Reverse Voltage
15797
Symbol
Figure 3. Forward Current vs. Forward Voltage
1000
R
0.01
T
100
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
thJA
10
T
stg
0
1
j
0.1
0
Min
V
T
V
R
0.5
j
- Reverse Voltage (V)
= 125 °C
F
- Forward Voltage (V)
1
- 65 to + 150
Typ.
T
j
Value
= 25 °C
320
125
1
10
Document Number 85512
1.5
f = 1 MHz
1000
Max
330
410
200
1.6
Rev. 1.7, 26-Feb-07
100
2.0
K/W
Unit
°C
°C
Unit
mV
mV
mV
nA
pF