BAT86S Vishay, BAT86S Datasheet - Page 2

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BAT86S

Manufacturer Part Number
BAT86S
Description
Small Signal Schottky Diode
Manufacturer
Vishay
Datasheet
BAT86S
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
amb
amb
Figure 2. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
15827
15828
Figure 1. Max. Reverse Power Dissipation vs.
10000
Parameter
1000
500
450
400
350
300
250
200
150
100
100
50
10
0
1
25
25
R
thJA
V
V
R
R
T
= 540 K/W
Junction Temperature
= 50 V
j
= V
T
50
50
- Junction Temperature (°C)
j
- Junction Temperature (°C)
RRM
75
75
at 100 % V
I
I
I
I
I
V
V
P
F
F
F
F
F
R
R
R
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
- Limit
100
100
= 40 V
= 1 V, f = 1 MHz
R
Test condition
125
125
at 80 % V
P
R
- Limit
150
150
R
Symbol
C
V
V
V
V
V
I
R
F
F
F
F
F
D
15830
Figure 4. Diode Capacitance vs. Reverse Voltage
15829
Figure 3. Forward Current vs. Forward Voltage
1000
100
0.1
10
10
9
8
7
6
5
4
3
2
1
0
1
0
0.1
Min
T
V
V
j
F
= 125 °C
R
- Forward Voltage (V)
0.5
- Reverse Voltage (V)
1
Typ.
T
j
= 25 °C
1.0
10
Document Number 85514
f = 1 MHz
Max
300
380
450
600
900
5
8
Rev. 1.7, 26-Feb-07
100
1.5
Unit
mV
mV
mV
mV
mV
µA
pF

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