GSD1624 E-Tech Electronics LTD, GSD1624 Datasheet
GSD1624
Manufacturer Part Number
GSD1624
Description
Npn Epitaxial Planar Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GSD1624.pdf
(3 pages)
G
HIGH CURRENT SWITCHING APPLICATION
Description
T
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed
*Large current capacity and wide ASO
Package Dimension
Absolute Maximum Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (PULSE)(note1)
Total Power Dissipation
Junction Temperature
Storage Temperature
Note 1:Single pulse,PW=10ms
ELECTRICAL Characteristics
V
V
V
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
Cob
tstg
tf
G
fT
(BR)CBO
(BR)CEO
(BR)EBO
he GSD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment .
S
S
Symbol
D
D
1
1
6
6
Parameter
2
2
4
4
Min.
100
50
60
6
-
-
-
-
-
-
-
-
N
N
P
P
Typ.
0.19
0.94
150
650
25
35
N
N
-
-
-
-
-
-
(Ta=25 : ,unless otherwise specified)
E
E
(Ta=25 : ,unless otherwise specified)
P
P
I
I
T
T
A
A
Max.
560
0.5
1.2
1
1
-
-
-
-
-
-
-
X
X
I
I
A
A
Symbol
V
V
V
Tstg
L
L
P
CBO
CEO
EBO
I
I
Tj
C
C
D
P
P
L
L
Unit
MHz
uA
uA
pF
ns
ns
V
V
V
V
-
V
A
A
N
N
REF.
A
A
A
B
C
D
E
F
R
R
IC=10uA ,IE=0
IC=1mA,RBE=
IE=10uA,Ic=0
VCB=40V
VEB=4V
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=0.1A
VCE=10V, Ic=50mA
VCB=10V, f=1MHz
See test circuit
See test circuit
S
S
-55 ~ +150
4.05
1.50
1.30
2.40
0.89
Min.
Ratings
4.4
I
I
+150
L
L
Millimeter
0.5
60
50
6
3
6
I
I
C
C
O
O
Max.
4.25
1.70
1.50
2.60
1.20
4.6
N
N
T
Test Conditions
T
R
R
REF.
G
M
H
K
J
L
A
A
I
N
N
S
S
Min.
0.40
1.40
0.35
3.00 REF.
1.50 REF.
0.70 REF.
I
5 q TYP.
I
S
S
Millimeter
T
T
Max.
Unit
0.52
1.60
0.41
O
O
W
V
V
V
A
A
R
R
1/3
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GSD1624 Summary of contents
Page 1
... N N HIGH CURRENT SWITCHING APPLICATION Description T he GSD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment . FEATURES *Adoption of FBET, MBIT processes *Low collector-to-emitter saturation voltage *Fast switching speed *Large current capacity and wide ASO Package Dimension Absolute Maximum Ratings ...
Page 2
CLASSIFICATION OF Hfe RANK RANGE TEST CIRCUIT (Unit: resistance: Ł ,capacitane:F 100-200 140-280 T U 200-400 280-560 2/3 ...
Page 3
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to ...