ESH2B Vishay, ESH2B Datasheet
ESH2B
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ESH2B Summary of contents
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... Operating junction and storage temperature range Document Number: 84649 Revision: 04-Jul-07 New Product ESH2B, ESH2C & ESH2D Vishay General Semiconductor FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • ...
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... ESH2B, ESH2C & ESH2D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical reverse recovery time Typical stored charge Typical junction capacitance Note: (1) Pulse test: 300 µs pulse width duty cycle ...
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... MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.060 MIN. (1.52 MIN.) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) ESH2B, ESH2C & ESH2D Vishay General Semiconductor 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance 0 100 t - Pulse Duration (s) Mounting Pad Layout 0.085 MAX. ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...