RSF014N03 ROHM Co. Ltd., RSF014N03 Datasheet
RSF014N03
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RSF014N03 Summary of contents
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... 0.6 S ∗1 I 5.6 SP ∗2 P 0.8 D Tch 150 −55 to +150 Tstg Symbol Limits ∗ Rth(ch-a) 156 RSF014N03 Abbreviated symbol : PN (3) ∗2 (1) ∗1 (2) (1) Gate ∗1 ESD PROTECTION DIODE (2) Source ∗2 BODY DIODE (3) Drain Unit °C °C Unit ° ...
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... R =10Ω G ∗ − 1.4 2 15V DD ∗ − − 0 ∗ − − 0 1.4A D Min. Typ. Max. Unit − − 1 0.6A RSF014N03 Conditions =0V DS = 1mA D = 10V =11Ω =10Ω G Conditions =0V GS Rev.B 2/4 ...
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... On-State Resistance vs. Gate-Source Voltage 10000 =4. Pulsed Ta=125°C Ta=75°C Ta=25°C 1000 Ta= −25°C 100 10 0.01 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) RSF014N03 10 Ta=25°C =15V =1. =10Ω Pulsed ...
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... Transistors 1000 Ta=25°C Pulsed V = =4. =10V GS 100 0 DRAIN CURRENT : I (A) D Fig.10 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) RSF014N03 Rev.B 4/4 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...