SS12P4C Vishay, SS12P4C Datasheet - Page 3

• Manufacturer Part Number: SS12P4C
• Description: High Current Density Surface Mount Schottky Barrier Rectifiers
• Manufacturer: Vishay

Document Number: 89141
Revision: 14-Jul-09
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 2. Forward Power Loss Characteristics Per Diode
0.01
100
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.1
10
10
0
1
1
10
0
0
T
A
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
0.1
20
1
T
Instantaneous Forward Voltage (V)
A
0.2
= 100 °C
30
Average Forward Current (A)
T
A
D = 0.1
= 125 °C
2
D = 0.2 D = 0.3
0.3
40
3
0.4
50
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T
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A
= 25 °C
0.5
60
4
D = 0.5
D = t
0.6
70
5
p
T
/T
0.7
D = 0.8
A
T
80
= 100 °C
A
D = 1.0
= 25 °C
T
6
t
0.8
p
90
100
0.9
7
New Product
Figure 6. Typical Transient Thermal Impedance Per Device
10 000
1000
100
100
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.01
0.1
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Junction to Ambient
Vishay General Semiconductor
0.1
Reverse Voltage (V)
t - Pulse Duration (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
SS12P4C
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p-p
100
100
3