BD243 Bourns, Inc., BD243 Datasheet

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BD243

Manufacturer Part Number
BD243
Description
Npn Silicon Power Transistors
Manufacturer
Bourns, Inc.
Datasheet
1.BD243.pdf (4 pages)

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absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-emitter voltage (R
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
●
●
●
●
●
R O D U C T
Designed for Complementary Use with the
BD244 Series
65 W at 25°C Case Temperature
6 A Continuous Collector Current
10 A Peak Collector Current
Customer-Specified Selections Available
2. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
S
C
= 0.1 Ω, V
I N F O R M A T I O N
BE
= 30 mA)
= 100 Ω)
p
≤ 0.3 ms, duty cycle ≤ 10%.
CC
= 20 V.
RATING
C
E
B
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
BD243
BD243A
BD243B
BD243C
BD243
BD243A
BD243B
BD243C
BD243, BD243A, BD243B, BD243C
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
I
P
P
CER
CEO
EBO
CM
T
I
I
T
C
stg
B
tot
tot
L
j
C
B(on)
2
1
2
3
= 0.4 A, R
-65 to +150
-65 to +150
VALUE
62.5
115
100
250
55
70
90
45
60
80
10
65
5
6
3
2
BE
= 100 Ω,
MDTRACA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
A
1

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BD243 Summary of contents

Page 1

... Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING BD243 BD243A BD243B BD243C BD243 BD243A BD243B BD243C BD243, BD243A, BD243B, BD243C TO-220 PACKAGE (TOP VIEW SYMBOL VALUE CER 90 115 45 ...

Page 2

... BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note Collector-emitter CES cut-off current 115 V CE Collector cut-off CEO current ...

Page 3

... COLLECTOR-EMITTER SATURATION VOLTAGE TCS633AH 10 1·0 0·1 0·01 10 0·001 BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 25°C C 0·1 1· Collector Current - A C Figure 3. BD243, BD243A, BD243B, BD243C vs BASE CURRENT TCS633AE I = 300 0·01 0·1 1·0 I ...

Page 4

... BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 100 10 1·0 0·1 0·01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation BD243 BD243A BD243B BD243C 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4 ...

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