ARF463AP1G Microsemi Corporation, ARF463AP1G Datasheet
ARF463AP1G
Manufacturer Part Number
ARF463AP1G
Description
N-channel Enhancement Mode Power Mosfets
Manufacturer
Microsemi Corporation
Datasheet
1.ARF463AP1G.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ARF463AP1G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
STATIC ELECTRICAL CHARACTERISTICS
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been
optimized for both linear and high efficiency classes of operation.
MAXIMUM RATINGS
V
Symbol
V
T
Symbol
•
•
•
•
BV
DS
V
GS
V
J
R
V
I
I
,T
P
DSS
GSS
DGO
T
g
Specified 125 Volt, 81.36MHz Characteristics:
DSS
I
θJC
GS
D
(ON)
DSS
(TH)
D
fs
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Output Power = 100 Watts.
Gain = 15dB (Class AB)
Efficiency = 75% (Class C)
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Power Dissipation @ T
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
1
(I
DS
D
C
(ON) = 4.5A, V
APT Website - http://www.advancedpower.com
= V
C
= 25°C
DS
= 25°C
GS
GS
= 25V, I
DS
DS
, I
= ±30V, V
GS
D
= V
= 0.8 V
= 0V, I
= 50mA)
D
DSS
= 4.5A)
GS
, V
DSS
D
= 10V)
DS
= 250 µA)
GS
, V
= 0V)
•
•
•
•
= 0V)
GS
Low Cost Common Source RF Package.
Low Vth thermal coefficient.
Low Thermal Resistance.
Optimized SOA for Superior Ruggedness.
= 0V, T
All Ratings: T
*
G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
ARF463AP1
ARF463AP1G* ARF463BP1G*
= 125°C)
125V
G
C
= 25°C unless otherwise specified.
D
S
MIN
500
2
3
ARF463A_BP1(G)
100W
Common
Source
-55 to 150
0.70
TYP
500
500
±30
180
300
ARF463BP1
9
3
100MHz
±100
MAX
250
5.0
25
4
5
TO-247
Amps
Watts
mhos
UNIT
°C/W
UNIT
Volts
Volts
Volts
Volts
µA
nA
°C
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ARF463AP1G Summary of contents
Page 1
... DS DSS GS = ±30V 0V 25V 4.5A 50mA APT Website - http://www.advancedpower.com ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* G Denotes RoHS Compliant, Pb Free Terminal Finish. D Common Source G S 125V 100W 100MHz = 25°C unless otherwise specified. C ARF463A_BP1(G) 500 500 9 ±30 180 0.70 -55 to 150 300 ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d(off) t Fall Time f FUNCTIONAL CHARACTERISTICS Symbol Characteristic G ...
Page 3
T , CASE TEMPERATURE (°C) C Figure 5, Typical Threshold Voltage vs Temperature 160 Class 150V 81.36 MHz 120 ...
Page 4
Bias 0 - 12V Input 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 19.81 (.780) 0.79 (.031) 20.32 (.800) 1.01 (.040) ...