ARF521 Microsemi Corporation, ARF521 Datasheet

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ARF521

Manufacturer Part Number
ARF521
Description
N-channel Enhancement Mode Power Mosfets
Manufacturer
Microsemi Corporation
Datasheet

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Maximum Ratings
The ARF521 is an RF power transistor designed for high voltage operation in
broadband HF, narrow band ISM and MRI power amplifi ers up to 150MHz.
Static Electrical Characteristics
Thermal Characteristics
• Specifi ed 125 Volt, 81MHz Characteristics:
Symbol
Symbol
Symbol
V
N-CHANNEL ENHANCEMENT MODE
T
V
V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
R
R
(BR)DSS
J
I
V
DS(ON)
I
RF POWER MOSFET
GS(TH)
V
, T
DSS
GSS
g
P
T
θ CS
I
θ JC
DSS
fs
D
GS
D
L
Output Power = 150 Watts.
Gain = 13dB (Class AB)
Effi ciency = 50%
STG
Parameter
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Gate Threshold Voltage (V
Characteristic
Junction to Case Thermal Resistance
Case to Sink
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Device Dissipation @ T
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
(Use High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.)
DS
Microsemi Website - http://www.microsemi.com
= V
C
DS
= 25°C
C
= 15V, I
GS
= 25°C
DS
, I
1
DS
DS
= ±30V, V
GS
D
(I
= V
= 50V, V
= 200mA)
= 0V, I
D(ON)
D
• High Voltage Breakdown and Large SOA
• Industry Standard Package
• Low Vth Thermal Coeffi cient
DSS
= 5A)
for Superior Ruggedness.
= 5A, V
, V
D
DS
GS
= 250 μA)
GS
= 0V)
= 0, T
= 0V)
GS
= 10V)
C
= 125°C)
All Ratings: T
C
=25°C unless otherwise specifi ed
Min
500
Min
3
2
-55 to 175
ARF521
0.56
Typ
500
±30
250
300
3.6
Typ
165V, 150W, 150MHz
0.1
10
±100
Max
250
Max
0.60
ARF521
0.8
25
4
mhos
Volts
°C/W
Unit
Unit
Unit
μA
nA
°C
W
V
Ω
V
V
A

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ARF521 Summary of contents

Page 1

... RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE The ARF521 power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifi ers up to 150MHz. • Specifi ed 125 Volt, 81MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (Class AB) Effi ...

Page 2

... DRAIN-TO-SOURCE VOLTAGE (VOLTS OPERATION HERE LIMITED BY R (ON =+25° =+175°C J SINGLE PULSE . 100 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 4, Typical Maximum Safe Operating Area ARF521 Unit Unit dB % 100us 1ms 10ms 100ms DC ...

Page 3

... Set to zero when modeling only the case to junction. 0.0590F 0.635F Z (Ω) Z (Ω 7 4 1.1 9 20.6 . 0 50mA dq =125V dd ARF521 12V 11V 10V 1.0 are the external thermal EXT ...

Page 4

... ARF521 Test Circuit 81.36 MHz R1 Bias 0 - 12V Input L1 TL1 C13 ARF521 Test Fixture 2-22- PIN 1 - SOURCE PIN 2 - GATE 2 PIN 3 - SOURCE PIN 4 - DRAIN Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents ...

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