MC74LVX541DTR2 ON Semiconductor, MC74LVX541DTR2 Datasheet - Page 3
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MC74LVX541DTR2
Manufacturer Part Number
MC74LVX541DTR2
Description
IC BUFF/DVR 8BIT N-INV 20TSSOP
Manufacturer
ON Semiconductor
Series
74LVXr
Datasheet
1.MC74LVX541DTR2G.pdf
(8 pages)
Specifications of MC74LVX541DTR2
Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
1
Number Of Bits Per Element
8
Current - Output High, Low
4mA, 4mA
Voltage - Supply
2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
20-TSSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Packages: – 7 mW/°C from 65° to 125°C
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
V
V
V
V
V
V
T
t
I
I
I
V
I
I
V
P
V
V
I
T
r
OK
out
CC
I
OZ
CC
CC
out
stg
CC
out
, t
OH
IK
OL
in
IH
in
D
in
A
IL
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power Dissipation in Still Air,
Storage Temperature
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature, All Package Types
Input Rise and Fall Time
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output Voltage
V
Maximum Low−Level Output Voltage
V
Maximum Input Leakage Current
Maximum Three−State Leakage
Current
Maximum Quiescent Supply Current
in
in
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
= V
= V
IH
IH
or V
or V
IL
IL
Parameter
Parameter
Parameter
CC
and GND Pins
TSSOP Package†
V
SOIC Packages†
CC
= 3.3V ±0.3V
I
I
I
I
I
I
V
V
V
V
OH
OH
OH
OL
OL
OL
in
in
out
in
Test Conditions
= 5.5 V or GND
= V
= V
= 50 mA
= 50 mA
= 4 mA
= − 50 mA
= − 50 mA
= − 4 mA
= V
http://onsemi.com
IL
CC
CC
or V
or GND
or GND
– 0.5 to V
IH
Min
−40
2.0
– 0.5 to + 7.0
– 0.5 to + 7.0
– 65 to + 150
3
0
0
0
Value
− 20
± 20
± 25
± 50
500
450
CC
V
0 to
Max
+ 85
V
2.0
3.0
3.6
2.0
3.0
3.6
2.0
3.0
3.0
2.0
3.0
3.0
3.6
3.6
3.6
100
3.6
5.5
+ 0.5
V
CC
CC
1.50
2.58
Min
2.0
2.4
1.9
2.9
ns/V
Unit
Unit
mW
mA
mA
mA
mA
°C
°C
V
V
V
V
V
V
T
A
= 25°C
Typ
2.0
3.0
0.0
0.0
Max
0.50
0.80
0.80
0.36
±0.1
±0.2
0.1
0.1
4.0
5
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
V
range GND v (V
tied to an appropriate logic voltage
level (e.g., either GND or V
Unused outputs must be left open.
out
This device contains protection
Unused inputs must always be
should be constrained to the
T
A
1.50
2.48
Min
2.0
2.4
1.9
2.9
= − 40 to 85°C
in
Max
0.50
0.80
0.80
0.44
±1.0
±2.5
40.0
0.1
0.1
or V
out
) v V
Unit
mA
mA
mA
in
V
V
V
V
CC
CC
and
).
.