OPE5T85 Roithner LaserTechnik GmbH, OPE5T85 Datasheet

OPE5T85

Manufacturer Part Number

OPE5T85

Description

High Speed Gaalas Infrared Emitter

Manufacturer

Roithner LaserTechnik GmbH

Datasheet

1.OPE5T85.pdf (2 pages)

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High Speed GaAlAs Infrared Emitter

that is designed for high power, low forward voltage

and high speed rise / fall time.

This device is optimized for speed and efficiency

at emission wavelength 850nm and has a high radiant

efficiency over a wide range of forward current.

This device is packaged T1-3/4 plastic package

and has narrow beam angle with lensed package

and cup frame. Especially this device is suited

as the emitter of data transmission without cable.

FEATURES

• High speed : 25ns rise time

• 850nm wavelength

• Narrow beam angle

• Low forward voltage

• High power and high reliability

• Available for pulse operating

APPLICATIONS

• Emitter of IrDA

• IR Audio and Telephone

• High speed IR communication

• IR LANs

• Available for wireless digital data transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

* Please take proper steps in order to secure reliability and safety in required conditions

MAXIMUM RATINGS

ELECTRO-OPTICAL CHARACTERISTICS

The OPE5T85 is GaAlAs infrared emitting diode

and environments for this device.

.Duty ratio = 1/100, pulse width=0.1ms.

.Lead Soldering Temperature (2mm from case for 5sec.).

Forward voltage

Reverse current

Capacitance

Radiant intensity

Peak emission wavelength

Spectral bandwidth 50%

Half angle

Optical rise & fall time(10%~90%)

Cut off frequency

. 10logPo(fc MHz)/Po(0.1 MHz)=-3

Power Dissipation

Forward current

Pulse forward current

Reverse voltage

Operating temp.

Soldering temp.

Otherwise, it should be keeping in a damp proof box with desiccants.

Item

CCCCCCCCCCCCCC 2

CCCCCCC 1C

Symbol

Topr.

Tsol.

O P E 5 T 8 5

FPC

Symbol

tr/tf

-25~ +85

Rating

260.

150

100

1.0

4.0

Conditions

DD EC

f=1

=50 EC

=50 C

D ECEEC

DIMENSIONS (Unit : mm)

=4VC

(Ta=25)

Unit

°CC

Min.

2- 0.5

Tolerance : ±0.2mm

/ Anode

/ Cathode

25/13

Typ.

120

850

1.5

±8

2.54

Max.

2.0

(Ta=25)

Unit

deg.

MHz

µEC

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OPE5T85 Summary of contents

Page 1

... High Speed GaAlAs Infrared Emitter The OPE5T85 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. ...

Page 2

... F 0.8 0.6 0.4 0.2 0 100 700 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY -40° -50° -60° -70° -80° -90° 1.0 1.5 1.6 (V) 4 OPE5T85 Ta=25 Ta= 100 200 500 Forward Current IF(mA) Ta=25 750 800 850 900 950 Emission Wavelength (nm) 0° 10° -10° 20° -20° 30° -30° 0.5 0 0.5 Relative Radiant intensity Ta=25 40° ...

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