OPE5T87 Roithner LaserTechnik GmbH, OPE5T87 Datasheet

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OPE5T87

Manufacturer Part Number
OPE5T87
Description
High Speed Gaalas Infrared Emitter
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
High Speed GaAlAs Infrared Emitter C C C C
The OPE5T87 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
FEATURES
• Ultra high-speed : 25ns rise time
• 880nm wavelength
• Narrow beam angle
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• Emitter of IrDA
• IR Audio and Telephone
• High speed IR communication
• IR LANs
• Available for wireless digital data transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGSC C
ELECTRO-OPTICALCHARACTERISTICS
*3
C
1
2
for this device.
1
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead Soldering Temperature (2mm from case for 5sec.).
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Optical rise & fall time(10%~90%)
Cut off frequency
. 10logPo(fc MHz)/Po(0.1 MHz)=-3
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
C
CCCCCCCCCCCCCCC 2
CCCCCC
Symbol
C
*3
Topr.
Tsol.
V
P
I
I
FPC
FC
DC
RC
Symbol
OPE5T87
tr/tf
V
Ct
I
Ie
fc
CCCCCCCCCCCCCCCCC(Ta=25°C )
R

F
p
C
C
C
C
-25~ +85
15
Rating
260.
150
100
1.0
4.0
I
Conditions
F
DD EC
I
I
I
I
I
I
V
F
f=1
F
F
F
F
F
=50 EC
=50 EC
=50 EC
=50 C
=50 C
=50 C
R
D ECEEC
=4VC
DIMENSIONS (Unit : mm)
C
C
Unit
°CC
°CC
AC
Min.
EC
C
50
2- 0.5
C
C
C
C
C
C
C
C
Tolerance : ±0.2mm
25/15
Typ.
120
880
1.5
±8
20
45
14
Cathode
Anode
C
2.54
Max.
2.0
10
C
C
C
C
C
C
(Ta=25°C)
Unit
deg.
MHz
µEC
ns
V
/
C
C
C

OPE5T87 Summary of contents

Page 1

... High Speed GaAlAs Infrared Emitter The OPE5T87 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current ...

Page 2

... F 0.8 0.6 0.4 0.2 0 100 700 -60° -70° -80° -90° 1.0 1.4 1.5 1.6 ( OPE5T87 RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta= 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 750 800 850 900 Emission Wavelength (nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 0° 10° -10° ...

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