OPE5294 Roithner LaserTechnik GmbH, OPE5294 Datasheet

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OPE5294

Manufacturer Part Number
OPE5294
Description
Gaalas Infrared Emitter
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
GaAs Infrared Emitter C C C C
that is designed for low forward voltage and
high reliability. This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-
and has wide beam angle with lensed package
and cup frame.
FEATURESC
• High-output powerC
• Wide beam angle
• High reliability
• Available for pulse operating
• Low cost
C
APPLICATIONSC
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
MAXIMUM RATINGSC C
ELECTRO-OPTICALCHARACTERISTICS
C
1
2
The OPE5294 is GaAs infrared emitting diode
for this device.
.Duty ratio = 1/100, pulse width=0.1ms.
.Lead Soldering Temperature (2mm from case for 5sec.).
Forward voltage
Reverse current
Capacitance
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
Power Dissipation
Forward current
Pulse forward current
Reverse voltage
Operating temp.
Soldering temp.
C
Otherwise, it should be keeping in a damp proof box with desiccants.
Item
Item
CCCCCCCCCCCCCC 2
C
3/4
CCC 1C
plastic package
Symbol
C
Topr.
Tsol.
I
V
P
I
FPC
FC
DC
RC
Symbol
OPE5294
V
Ct
I
Ie
CCCCCCCCCCCCCCCCC(Ta=25°C )
R

F
p
-25~ +85
25
Rating
260.
150
100
1.0
5.0
I
V
f = 1MHz
I
I
I
I
Conditions
F
F
F
F
F
=100mA
= 50mA
= 50mA
=100mA
R
=100mA
= 5V
DIMENSIONS (Unit : mm)
2- 0.5
Unit
°CC
°CC
AC
Min.
EC
C
C
Tolerance : ±0.2mm
Typ.
940
±22
1.4
20
30
45
Anode
Cathode
2.5
Max.
1.7
10
(Ta=25°C)
mW/
Unit
deg.
µA
nm
nm
pF
V

OPE5294 Summary of contents

Page 1

... GaAs Infrared Emitter The OPE5294 is GaAs infrared emitting diode that is designed for low forward voltage and high reliability. This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1- ...

Page 2

... ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY -40° -50° -60° -70° -80° -90° 1.0 1.4 1.5 1.6 (V) 26 OPE5294 100 200 500 Forward Current IF(mA) 850 900 950 1000 1050 Emission Wavelength (nm) 0° 10° -10° 20° -20° 30° -30° 40° 0.5 0 0.5 Relative Radiant intensity Ta=25 50° ...

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