MA3S781D Panasonic Corporation of North America, MA3S781D Datasheet

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MA3S781D

Manufacturer Part Number
MA3S781D
Description
Silicon Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Schottky Barrier Diodes (SBD)
MA3S781D
Silicon epitaxial planar type
For high speed switching
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• Two MA3S781 (MA781) is contained in one package
• High-density mounting is possible
• Low forward voltage V
Detection efficiency
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current Single
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 2 GHz. 4. * : t
and the leakage of current from the operating equipment.
Parameter
Parameter
Single
Double
Double
Pulse Generator
(PG-10N)
R
s
*
= 50 Ω
Bias Application Unit (N-50BU)
F
A
(MA781WA)
Symbol
V
I
T
V
T
I
FM
RM
stg
F
R
a
j
Wave Form Analyzer
(SAS-8130)
R
Symbol
= 25°C ± 3°C
i
= 50 Ω
V
V
C
I
t
η
a
R
rr
F1
F2
t
= 25°C
−55 to +125
Rating
150
110
125
30
30
30
20
I
I
V
V
I
I
V
R
F
F
F
rr
Note) The part numbers in the parenthesis show conventional part number.
L
R
R
IN
= 1 mA
= I
= 30 mA
= 1 mA, R
SKH00061BED
= 3.9 kΩ, C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
V
, MA3S781E
R
(peak)
Unit
mA
mA
°C
°C
rr
V
V
Conditions
t
L
r
measurement circuit
Input Pulse
10%
t
t
δ = 0.05
p
r
= 100 Ω
90%
, f = 30 MHz
L
= 0.35 ns
= 2 µs
= 10 pF
t
p
t
Marking Symbol
• MA3S781D: M2P • MA3S781E: M2R
Internal Connection
I
F
EIAJ: SC-81
SSMini3-F2 Package
(0.51)
I
I
R
F
R
Output Pulse
L
= 10 mA
= 10 mA
= 100 Ω
(0.80)
1
t
I
rr
1.60
rr
= 1 mA
1 2
D
3
+0.05
–0.03
(0.80)
Min
3
t
0.28
2
±0.05
(0.51)
0.28
(MA781WK)
±0.05
Typ
1.5
1.0
65
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
MA3S781D MA3S781E
1
Max
0.4
1.0
1
E
3
0.12
0.60
Unit: mm
2
Cathode
+0.05
–0.02
+0.05
–0.03
Unit
µA
pF
ns
%
V
1

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MA3S781D Summary of contents

Page 1

... Note) The part numbers in the parenthesis show conventional part number. i SKH00061BED (MA781WK) 0.28 ±0. 0.28 ±0.05 (0.51) (0.51) (0.80) (0.80) +0.05 1.60 –0.03 3˚ MA3S781D MA3S781E 1 Cathode 1 Anode 1 EIAJ: SC-81 2 Cathode 2 Anode 2 SSMini3-F2 Package 3 Anode Marking Symbol • MA3S781D: M2P • MA3S781E: M2R Internal Connection Min Typ Max 0.4 1.0 1 1.5 1.0 65 Output Pulse ...

Page 2

... MA3S781D, MA3S781E  75°C 25° −20°C = 125° −1 10 − 0.4 0.8 1.2 Forward voltage  −1 10 −2 10 − 120 160 200 ( °C ) Ambient temperature T ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...

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