N25Q128 Numonyx, N25Q128 Datasheet - Page 90

• Manufacturer Part Number: N25Q128
• Description: 128-mbit 3 V, Multiple I/o, 4-kbyte Subsector Erase On Boot Sectors, Xip Enabled, Serial Flash Memory With 108 Mhz Spi Bus Interface
• Manufacturer: Numonyx

Instructions
N25Q128 - 3 V
same page (from the address whose 8 least significant bits (A7-A0) are all zero). Chip
Select (S) must be driven Low for the entire duration of the sequence.
If more than 256 bytes are sent to the device, previously latched data are discarded and the
last 256 data bytes are guaranteed to be programmed correctly within the same page. If less
than 256 data bytes are sent to device, they are correctly programmed at the requested
addresses without having any effects on the other bytes of the same page.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes. See
Table 32.: AC
Characteristics.
Chip Select (S) must be driven High after the eighth bit of the last data byte has been
latched in, otherwise the Page Program (PP) instruction is not executed.
As soon as Chip Select (S) is driven High, the self-timed Page Program cycle (whose
duration is top) is initiated. While the Page Program cycle is in progress, the Status Register
and the Flag Status Register may be read to check if the internal modify cycle is finished. At
some unspecified time before the cycle is completed, the Write Enable Latch (WEL) bit is
reset.
A Page Program (PP) instruction applied to a page which is protected by the Block Protect
(BP3,BP2, BP1, BP0 and TB) bits is not executed.
Page Program cycle can be paused by mean of Program/Erase Suspend (PES) instruction
and resumed by mean of Program/Erase Resume (PER) instruction.
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