TSHA620 Vishay, TSHA620 Datasheet - Page 2

• Manufacturer Part Number: TSHA620
• Description: High Speed Infrared Emitting Diode, 870 Nm, Gaalas Double Hetero
• Manufacturer: Vishay

TSHA620.
Vishay Semiconductors
Electrical Characteristics
T
Optical Characteristics
T
Type Dedicated Characteristics
T
www.vishay.com
2
Forward voltage
Temp. coefficient of V
Reverse current
Junction capacitance
Temp. coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temp. coefficient of λ
Rise time
Fall time
Virtual source diameter
Forward voltage
Radiant intensity
Radiant power
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
e
p
F
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
R
= 100 mA, t
= 100 mA
= 20 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 1.5 A
= 100 mA
= 1.5 A
= 1.5 A, t
= 100 mA, t
= 1.5 A, t
= 100 mA, t
= 5 V
= 0 V, f = 1 MHz, E = 0
Test condition
Test condition
Test condition
p
p
= 100 µs
= 100 µs
p
p
p
= 20 ms
= 20 ms
= 20 ms
TSHA6200
TSHA6201
TSHA6202
TSHA6203
TSHA6200
TSHA6201
TSHA6202
TSHA6203
TSHA6200
TSHA6201
TSHA6202
TSHA6203
TSHA6200
TSHA6201
TSHA6202
TSHA6203
Symbol
Symbol
TK
TKφ
TKλ
Δλ
V
C
λ
Part
I
∅
ϕ
t
t
t
t
R
p
r
r
f
f
F
VF
j
e
p
Symbol
Min
Min
V
V
V
V
φ
φ
φ
φ
I
I
I
I
I
I
I
I
e
e
e
e
e
e
e
e
F
F
F
F
e
e
e
e
300
400
500
600
Min
25
30
36
50
- 1.6
- 0.7
± 12
Typ.
Typ.
875
600
300
600
300
1.5
0.2
3.7
20
80
Typ.
500
600
700
800
3.2
3.2
3.2
3.2
40
50
60
65
22
23
24
25
Document Number 81021
Max
Max
100
1.8
Rev. 1.5, 28-Nov-06
Max
125
125
125
125
4.9
4.9
4.5
4.5
mV/K
nm/K
%/K
Unit
Unit
deg
mm
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
nm
nm
µA
pF
ns
ns
ns
ns
V
Unit
mW
mW
mW
mW
V
V
V
V