PZT751 ON Semiconductor, PZT751 Datasheet - Page 2

no-image

PZT751

Manufacturer Part Number
PZT751
Description
Pnp Transistor High Current
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PZT751T1
Manufacturer:
0N
Quantity:
8 000
Part Number:
PZT751T1G
Manufacturer:
ON
Quantity:
965
Part Number:
PZT751T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
PZT751T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
PZT751T1G
0
Company:
Part Number:
PZT751T1G
Quantity:
20
Company:
Part Number:
PZT751T1G
Quantity:
76 000
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Base-Emitter Cutoff Current
(V
Collector-Base Cutoff Current
(V
DC Current Gain
(I
(I
(I
(I
Collector-Emitter Saturation Voltages
(I
(I
Base-Emitter Voltages
(I
Base-Emitter Saturation Voltage
(I
Current-Gain-Bandwidth
(I
(I
(I
(I
C
C
C
C
C
C
C
C
C
C
C
E
EB
CB
= 50 mAdc, V
= 500 mAdc, V
= 1.0 Adc, V
= 2.0 Adc, V
= 2.0 Adc, I
= 1.0 Adc, I
= 1.0 Adc, V
= 1.0 Adc, I
= 50 mAdc, V
= 10 mAdc, I
= 10 mAdc, I
= 100 mAdc, I
= 4.0 Vdc)
= 80 Vdc, I
B
B
B
CE
CE
CE
C
E
= 200 mAdc)
= 100 mAdc)
= 100 mAdc)
B
CE
CE
E
= 0)
= 0)
CE
= 0)
= 2.0 Vdc)
= 2.0 Vdc)
= 2.0 Vdc)
= 0)
= 2.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 2.0 Vdc)
Characteristics
A
= 25°C unless otherwise noted)
http://onsemi.com
PZT751T1
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
BE(on)
h
EBO
CBO
f
FE
T
Min
5.0
60
80
75
75
75
40
75
-
-
-
-
-
-
Max
100
0.1
0.5
0.3
1.0
1.2
-
-
-
-
-
-
-
-
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
-

Related parts for PZT751