NSB1010XV5 ON Semiconductor, NSB1010XV5 Datasheet
NSB1010XV5
Related parts for NSB1010XV5
NSB1010XV5 Summary of contents
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... The BRT eliminates these individual components by integrating them into a single device. In the NSB1010XV5T5, two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space premium. • ...
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ELECTRICAL CHARACTERISTICS Characteristic Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (V = − Collector-Emitter Cutoff Current (V = − Emitter-Base Cutoff Current (V = −6 Collector-Base Breakdown Voltage (I = ...
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TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR 0.1 −25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...
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TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR −25°C A 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...
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... SOLDERING FOOTPRINT* 1.35 0.0531 0.0197 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com SOT−553 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 CONTROLLING DIMENSION: MILLIMETERS 3 ...
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... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NSB1010XV5/D ...