TIC226 Bourns, Inc., TIC226 Datasheet

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TIC226

Manufacturer Part Number
TIC226
Description
Silicon Triacs -
Manufacturer
Bourns, Inc.
Datasheet

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Copyright © 1997, Power Innovations Limited, UK
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
P R O D U C T
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2 )
Peak on-state surge current full-sine-wave (see Note 3)
Peak on-state surge current half-sine-wave (see Note 4)
Peak gate current
Peak gate power dissipation at (or below) 85°C case temperature (pulse width
Average gate power dissipation at (or below) 85°C case temperature (see Note 5 )
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
DRM
GTM
GTM
8 A RMS, 70 A Peak
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
5. This value applies for a maximum averaging time of 20 ms.
PARAMETER
Repetitive peak
off-state current
Peak gate trigger
current
Peak gate trigger
voltage
the rate of 320 mA/°C .
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
GT
of 50 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
V
V
V
V
D
supply
supply
supply
supply
supply
supply
supply
supply
= rated V
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
R
R
R
R
TEST CONDITIONS
G
L
L
L
L
L
L
L
L
= 0
= 10
= 10
= 10
= 10
= 10
= 10
= 10
= 10
MT1
MT2
G
Pin 2 is in electrical contact with the mounting base.
200 s)
T
t
t
t
t
t
t
t
t
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TIC226M
TIC226D
TIC226N
TIC226S
C
= 110° C
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
> 20 s
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
APRIL 1971 - REVISED MARCH 1997
I
P
V
T(RMS)
I
I
P
T
I
G(AV)
TSM
TSM
DRM
T
GM
T
GM
stg
C
L
MIN
2
3
1
SILICON TRIACS
TYP
-0.8
-0.8
-12
0.7
0.9
-40 to +110
-40 to +125
20
-9
TIC226 SERIES
2
VALUE
400
600
700
800
230
2.2
0.9
70
80
±1
8
MAX
-50
-50
±2
50
-2
-2
2
2
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
W
W
V
A
A
A
A
V
1

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TIC226 Summary of contents

Page 1

... V† p(g) = +12 V† p(g) = -12 V† p(g) = -12 V† p(g) TIC226 SERIES SILICON TRIACS APRIL 1971 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW MDC2ACA SYMBOL VALUE 400 600 V DRM 700 800 I 8 T(RMS TSM I ...

Page 2

... TIC226 SERIES SILICON TRIACS APRIL 1971 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted ) (continued) PARAMETER V Peak on-state voltage I = ± +12 V† supply I Holding current -12 V† supply V = +12 V† supply I Latching current -12 V† ...

Page 3

... SURGE ON-STATE CURRENT CYCLES OF CURRENT DURATION TC01AE 100 V = ± Prior Device Conduction 10 Gate Control Guaranteed 1 80 100 120 1 Consecutive 50-Hz Half-Sine-Wave Cycles TIC226 SERIES SILICON TRIACS APRIL 1971 - REVISED MARCH 1997 vs TC01AC °C C 0·01 0· Gate Forward Current - A Figure 4 ...

Page 4

... TIC226 SERIES SILICON TRIACS APRIL 1971 - REVISED MARCH 1997 MAX RMS ON-STATE CURRENT vs CASE TEMPERATURE 100 T - Case Temperature - °C C Figure 7. PARAMETER MEASUREMENT INFORMATION L1 I MT2 DUT R1 NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed so that the off-state-voltage duration is approximately 800 µ ...

Page 5

... B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm MECHANICAL DATA 2,95 2,54 6,6 6,0 15,90 14,55 6,1 3,5 14,1 12,7 1,70 1,07 2,74 2,34 5,28 4,88 ALL LINEAR DIMENSIONS IN MILLIMETERS TIC226 SERIES SILICON TRIACS APRIL 1971 - REVISED MARCH 1997 4,70 4,20 1,32 1,23 0,64 0,41 2,90 2,40 VERSION 2 MDXXBE 5 ...

Page 6

... TIC226 SERIES SILICON TRIACS APRIL 1971 - REVISED MARCH 1997 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. ...

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