L6N60 Leshan Radio Company, L6N60 Datasheet
L6N60
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L6N60 Summary of contents
Page 1
... Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The LRC L6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors ...
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... Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case ELECTRICAL CHARACTERISTICS PARAMETER OFF CHARACTERISTICS L6N60-A Drain-Source Breakdown Voltage L6N60-B Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance ...
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... Notes: 1. Repetitive Rating : Pulse width limited 16.8mH 6A ≤ 6.2A, di/dt ≤200A/µ Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature LESHAN RADIO COMPANY, LTD. SYMBOL TEST CONDITIONS 6 ...
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... TEST CIRCUITS AND WAVEFORMS + - Fig. 1A Peak Diode Recovery dv/dt Test Circuit V GS P.W. (Driver (D.U.T (D.U.T.) Fig. 1B Peak Diode Recovery dv/dt Waveforms LESHAN RADIO COMPANY, LTD. + D.U. Driver * dv/dt controlled controlled by pulse period Same Type SD * D.U.T.-Device Under Test as D.U.T. Period I , Body Diode Forward Current ...
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... TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 3A Gate Charge Test Circuit 10V t p Fig. 4A Unclamped Inductive Switching Test Circuit LESHAN RADIO COMPANY, LTD. Fig. 2B Switching Waveforms Fig. 3B Gate Charge Waveform L BV DSS D.U.T. Fig. 4B Unclamped Inductive Switching Waveforms ...
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... LESHAN RADIO COMPANY, LTD. TO-220 6/6 ...