BT136B NXP Semiconductors, BT136B Datasheet
BT136B
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BT136B Summary of contents
Page 1
... 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136B series E MAX. MAX. UNIT BT136B- 600E 800E 600 800 SYMBOL T2 MIN. MAX. UNIT -600 -800 1 ...
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... 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT136B series E MIN. TYP. MAX. UNIT - - 3.0 K 3.7 K K/W MIN. TYP. MAX. UNIT - ...
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... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136B series E 107 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 107˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...
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... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT136B series E typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width ...
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... Net Mass: 1.4 g 2.54 (x2) MOUNTING INSTRUCTIONS Dimensions in mm Notes 1. Plastic meets UL94 V0 at 1/8". June 2001 10.3 max 11 max 15.4 0.85 max (x2) Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BT136B series E 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.300 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT136B series E Rev 1.300 ...